A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

A mask is provided in embodiments of the disclosure, at least including: a first light transmission area provided with a first optical filter film; and a second light transmission area provided with a second optical filter film; the first optical filter film and the second optical filter film comprise respective materials through which light of different frequency ranges is optically filtered, respectively. A method for manufacturing a mask, a lithography method, a display panel, a display device, and an exposure device are further provided in embodiments of the disclosure.

A high harmonic generation assembly and method for generating high harmonic radiation. The assembly comprises a cavity configured to receive input radiation and increase the intensity of the input radiation inside the cavity for forming drive radiation suitable for use in high harmonic generation. The assembly further comprises an interaction region within the cavity at which, in use, a medium is present, the medium being configured to generate harmonic radiation by high harmonic generation when the drive radiation is incident thereupon, and an optical assembly configured to direct the drive radiation to pass through the interaction region, and comprising an output coupler comprising an aperture through which at least a part of the generated harmonic radiation is able to exit the cavity. The optical assembly is further configured to shape the drive radiation into a converging hollow beam before the drive radiation passes through the interaction region.

According to an exemplary embodiment of the invention, a method of patterning a photoresist is provided. The method includes selectively illuminating an edge portion of a photoresist using an illumination system to form a patterned portion of the photoresist.

In an embodiment, an apparatus includes an energy source, a support platform for holding a wafer, an optical path extending from the energy source to the support platform, and a photomask aligned such that a patterned major surface of the photomask is parallel to the force of gravity, where the optical path passes through the photomask, where the patterned major surface of the photomask is perpendicular to a topmost surface of the support platform.

A system (400) includes an illumination system (402), a detector (404), and a comparator (406). The illumination system includes a radiation source (408) and a spatial light modulator (410). The radiation source generates a beam of radiation (442). The spatial light modulator directs the beam toward a surface (436) of an object (428) and adjusts a spatial intensity distribution of the beam at the surface. The detector receives radiation (444) scattered at the surface and by a structure (434) near the surface. The detector generates a detection signal based on the received radiation. The comparator receives the detection signal, generates a first image based on the detection signal, and distinguishes between a spurious signal and a signal corresponding to a presence of a foreign particle on the surface based on the first image and the adjusted spatial intensity distribution.

According to examples, a phase plate may include a transparent substrate and a photopolymer layer attached to the transparent substrate. The photopolymer layer may adjust a backlight via a phase adjustment and focusing. The phase plate may focus a plurality of red, green, and blue components of the backlight onto respective red, green, and blue subpixels of a thin-film-transistor (TFT) layer deposited thereon. A distance between the photopolymer layer of the phase plate and the plurality of red, green, and blue subpixels of the thin-film-transistor (TFT) layer may be in a range from about 200 μm to about 500 μm. In some examples, the phase plate may be part of a liquid crystal display (LCD) apparatus along with a red, green, blue (RGB) laser to provide backlight; a grating light guide to transmit the backlight; and a liquid crystal display (LCD) layer on the thin-film-transistor (TFT) layer.

An illumination system includes a plurality of pixels (or spots) that are (or may be) configured in one or more polarization configuration types. The pixels of the illumination system may be configured to promote particular types of polarization (e.g., transverse electric (TE) polarization, transvers magnetic (TM) polarization) to increase pattern contrast while achieving suitable exposure operation throughput. Moreover, the pixels of the pixels of the illumination system may be configured to achieve free-form (arbitrary or freely-configurable) polarization, which permits the polarization of radiation to be tailored to particular exposure operation patterns and other parameters.

Provided is an exposure device capable of improving exposure accuracy while ensuring throughput. The exposure device 100 includes: a reflective liquid-crystal modulating device 21, 22; a light source device 10 uniformly illuminating the reflective liquid-crystal modulating device 21, 22 with power-stabilized pulsed laser light in a ultraviolet wavelength band; a projection optical system 30 forming an image of reflected light modulated by the reflective liquid-crystal modulating device 21, 22; and a stage 40 supporting a target on which exposure is performed by a pattern imaged by the projection optical system 30.

A reflective optical element (17), in particular for an illumination optical unit of a projection exposure apparatus includes: a structured surface (25a) that preferably forms a grating structure (29), and a reflective coating (36) that is applied to the structured surface (25a). The reflective coating (36) covers the structured surface (25a) discontinuously, and the reflective optical element (17) has at least one protective layer (37) that covers the structured surface (25a) continuously. Also disclosed are an illumination optical unit (4) for a projection exposure apparatus (1) including at least one reflective optical element (17) of this type, to a projection exposure apparatus (1) including an illumination optical unit (4) of this type, and to a method for producing a protective layer (37) on a reflective optical element (17) of this type.