An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.

A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.

A projection exposure system (10) for microlithography. The system includes projection optics (12) configured to image mask structures into a substrate plane (16), an input diffraction element (28) which is configured to convert irradiated measurement radiation (21) into at least two test waves (30) directed onto the projection optics (12) with differing propagation directions, a detection diffraction element (34; 28) which is disposed in the optical path of the test waves (30) after the latter have passed through the projection optics (12) and is configured to produce a detection beam (36) from the test waves (30) which has a mixture of radiation portions of both test waves (30), a photo detector (38) disposed in the optical path of the detection beam (36) which is configured to record the radiation intensity of the detection beam (36), time resolved, and an evaluation unit which is configured to determine the lateral imaging stability of the projection optics (12) from the radiation intensity recorded.

The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising a mirror arrangement composed of a plurality of mutually independently adjustable mirror elements, and at least one polarization-influencing arrangement arranged upstream of the mirror arrangement relative to the light propagation direction, wherein the polarization-influencing arrangement has a group of first reflection surfaces and a group of second reflection surfaces, wherein the first reflection surfaces are tiltable independently of one another, and wherein, during the operation of the optical system, light reflected at respectively one of the first reflection surfaces can be directed onto the mirror arrangement via respectively a different one of the second reflection surfaces depending on the tilting of the first reflection surface.

According to one embodiment, a spatial light modulator unit is used in the illumination optical system for illuminating an illumination target surface with light from a light source and comprises: a spatial light modulator with a plurality of optical elements arrayed in a predetermined plane and controlled individually; a spatial light modulation element which applies spatial light modulation to the incident light from the light source and which makes rays of intensity levels according to positions of the respective optical elements, incident on the plurality of optical elements; and a control unit which individually controls the plurality of optical elements on the basis of information about the intensity levels of the rays incident on the respective optical elements.

The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system.

An apparatus and method are used to form patterns on a substrate. The apparatus comprises a projection system, a patterning device, a low-pass filter, and a data manipulation device. The projection system projects a beam of radiation onto the substrate as an array of sub-beams. The patterning device modulates the sub-beams to substantially produce a requested dose pattern on the substrate. The low-pass filter operates on pattern data derived from the requested dose pattern in order to form a frequency-clipped target dose pattern that comprises only spatial frequency components below a selected threshold frequency. The data manipulation device produces a control signal comprising spot exposure intensities to be produced by the patterning device, based on a direct algebraic least-squares fit of the spot exposure intensities to the frequency-clipped target dose pattern. In various examples, filters can also be used.

According to an embodiment, mask manufacturing equipment includes a detector, an irradiator, a calculator, and a controller. The detector detects positional deviation of a pattern formed on a mask substrate. The irradiator irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate. The calculator calculates an area periphery irradiation condition under which the irradiator is caused to emit laser light to a peripheral area of the pattern on the basis of the positional deviation detected by the detector so that the pattern area is reduced by forming the heterogeneous layer in the peripheral area of the pattern. The controller controls the irradiator to form the heterogeneous layer in the peripheral area of the pattern according to the area periphery irradiation condition.

The disclosure provides an illumination optical unit for projection lithography, which illuminates an object field with illumination light. The illumination optical unit includes a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The field facets are imaged in the object field by a transfer optical unit. The pupil facet mirror includes a pupil facet mirror polarization section and a pupil facet mirror neutral section. The polarization section is arranged so that the illumination light is reflected in the region of a Brewster angle. The neutral section is arranged so that the illumination light is reflected in the region of a normal incidence.

An illumination system of a microlithographic projection exposure apparatus includes a spatial light modulator which varies an intensity distribution in a pupil surface. The modulator includes an array of mirrors that reflect impinging projection light into directions that depend on control signals applied to the mirrors. A prism, which directs the projection light towards the spatial light modulator, has a double pass surface on which the projection light impinges twice, namely a first time when leaving the prism and before it is reflected by the mirrors, and a second time when entering the prism and after it has been reflected by the mirrors. A pupil perturbation suppressing mechanism is provided that reduces reflections of projection light when it impinges the first time on the double pass surface, and/or prevents that light portions being a result of such reflections contribute to the intensity distribution in the pupil surface.