A method for displacing an optical component is disclosed, in which the electrical power maximally required when displacing the component is less than the sum of the maximum electrical powers of the at least two actuators used for the displacement.

A lithographic apparatus injects gas between a patterning device and a patterning device masking blade to help protect the patterning device from contamination. The gas may be injected into the space defined between the patterning device and the patterning device blade by one or more gas supply nozzles that are arranged on at least one side of the patterning device. The one or more gas supply nozzles are coupled to a frame which a patterning device support structure moves relative to. Each nozzle may be constructed and arranged to supply gas over at least the patterning region of the reflective patterning device.

A displacement device for pivoting a mirror element with two degrees of freedom of pivoting includes an electrode structure including actuator electrodes. The actuator electrodes are comb electrodes. All actuator electrodes are arranged in a single plane. The actuator electrodes form a direct drive for pivoting the mirror element.

A lithography apparatus is disclosed, which comprises a mirror having at least two mirror segments which are joined together in such a way that an interspace is formed between the mirror segments, and a sensor for detecting the relative position of the mirror segments, wherein the sensor is arranged in the interspace between the mirror segments.

A support device for an optical apparatus is disclosed. The support device includes first and second support elements. The support device also includes first and second flexure bearings. The first flexure bearing and the second flexure bearing each connect the first support element and the second support element to one another in a thermally conductive manner and hold the first support element in a manner movable in at least one first direction relative to the second support element. Spring forces generated by the first flexure bearing and the second flexure bearing partly or completely cancel one another out in the case of a movement of the first support element relative to the second support element in the first direction.

An illumination optical unit for EUV projection lithography illuminates an illumination field with illumination light from a light source. A first facet mirror of the illumination optical unit has a plurality of first facets for the reflective guidance of partial beams of a beam of the EUV illumination light. Disposed downstream of the first facet mirror is a second facet mirror with a plurality of second facets for further reflective guidance of the partial beams. As a result of this, the reflective beam guidance that the two facets predetermines object field illumination channels, by which the whole object field is illuminable by the illumination light in each case and to which exactly one first facet and exactly one second facet is assigned in each case.

An illumination optical unit for EUV projection lithography includes a field facet mirror and a pupil facet mirror. A correction control device, which is used for the controlled displacement of at least some field facets that are usable as correction field facets, which are signal connected to displacement actuators, is embodied so that a correction displacement path for the correction field facets is so large that a respective correction illumination channel is cut off at the margin by the correction pupil facet so that the illumination light partial beam is not transferred in the entirety thereof from the correction pupil facet into the object field.

A facet mirror, such as for use as an optical component in a projection exposure apparatus for EUV microlithography, includes at least two mirror modules having individual mirrors and mirror module surfaces and at least on one side a non-reflective edge region and a module edge. Adjacent individual mirrors in the mirror modules are a distance from each other that is less than half the width of the non-reflective edge region. The at least two adjacent module edges of adjacent mirror modules are offset with respect to each other by a height h along the surface normal of one of the two mirror module surfaces.

Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio AB is greater than 1.1. The result is a metrology system in which a measurement light throughput is optimized even in the simulation or emulation of an imaging optical unit of a projection exposure apparatus having an image-side numerical aperture of greater than 0.5 and in particular in the simulation or emulation of an anamorphic imaging optical unit.