An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

A method of manufacturing a patterned stamp (100) for patterning a contoured surface (10) is disclosed. The method comprises applying a layer (115) of a pliable material precursor over a master (50) carrying an inverse pattern (52) to form a desired pattern (112) in said layer; curing the pliable material precursor to form a pliable stamp layer (120) comprising said desired pattern; providing an intermediate stamp structure by adhering a porous pliable support layer (130) to the pliable stamp layer; releasing the intermediate stamp structure from the master; forcing the intermediate stamp structure onto the contoured surface with said pattern of features facing the contoured surface; forming the patterned stamp by filling the porous pliable support layer with a filler material to reduce the pliability of the support layer; and removing the patterned stamp from the contoured surface. A corresponding patterned stamp, imprinting method and imprinted article are also disclosed.

A system for mitigating damage to optical elements caused by vacuum ultraviolet (VUV) light exposure is disclosed. The system includes a light source configured to generate VUV and a chamber containing one or more gaseous fluorine-based compounds of a selected partial pressure. The system includes one or more optical elements. The one or more optical elements are located within the chamber and are exposed to the one or more gaseous fluorine-based compounds. The VUV light generated by the light source is of sufficient energy to dissociate the fluorine-based compound within the chamber into a primary product.

A refractive projection lens for imaging a pattern in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation of a mercury vapor lamp includes a multiplicity of lens elements are arranged along an optical axis between the object and image planes. The lens elements image a pattern in the object plane into the image plane with a reducing imaging scale. The lens elements include first lens elements made of a first material with a relatively low Abbe number and a second lens elements made of a second material with a higher Abbe number relative to the first material.

A projection objective, used for projecting an object space to an image space. The objective includes, from the object space along an optical axis in sequence: a first lens set (G1) having positive focal power, a second lens set (G2) having negative focal power, a third lens set (G3) having positive focal power, a fourth lens set (G4) having negative focal power, and a fifth lens set (G5) having positive focal power. Aspheric lenses are provided in the first lens set (G1), the second lens set (G2), the third lens set (G3), the fourth lens set (G4), and the fifth lens set (G5). According to the design, the number of lenses is reduced, the structure of the objective is more compact, the transmittance of the objective is improved, the structural design of aspheric lenses is optimized, the asphericity of the aspheric lenses is reduced, the processing difficulty and costs for the aspheric lenses are reduced, and except for the above situations, the objective has a bitelecentric structure, and the sensitivity of the objective for micro irregularity defects on a mask surface is reduced.

An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

The present invention provides a calculation method of calculating optical characteristics of a projection optical system that change due to heat during exposure of a substrate, the method comprising measuring image point positions at different measurement times for a plurality of measurement points on an object plane of the projection optical system; and calculating the optical characteristics based on the image point position measured in the measuring for each of the plurality of measurement points and measurement time for each of the plurality of measurement points.

An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

An optical lithography system for patterning semiconductor devices and a method of using the same are disclosed. In an embodiment, an apparatus includes an optical path; a prism disposed on the optical path; a lens disposed on the optical path; and a tunable mirror disposed on the optical path, the tunable mirror including a mirror having a concave surface at a front-side thereof; a rear support attached to a backside of the mirror; and a plurality of fine-adjustment screws extending from the rear support to the backside of the mirror.