A lithographic system including a lithographic apparatus with an anamorphic projection system, and a radiation source configured to generate an EUV radiation emitting plasma at a plasma formation location, the EUV radiation emitting plasma having an elongate form in a plane substantially perpendicular to an optical axis of the radiation source.

The techniques disclosed herein relate to a lens element for a microlithographic projection exposure apparatus designed for operation in the DUV, and a method and an arrangement for forming an antireflection layer. In accordance with one aspect, in the case of a lens element according to the disclosed techniques, an antireflection layer is formed on a lens substrate, the antireflection layer comprising a first material of relatively lower refractive index and a second material of relatively higher refractive index, and a mixture ratio between the first material and the second material carrying in a lateral direction and/or in a vertical direction.

The disclosure provides an optical system, having a first optical control loop, which is set up to regulate a position and/or spatial orientation of a first optical element relative to a first module sensor frame, and a first module control loop, which is set up to regulate a position and/or spatial orientation of the first module sensor frame relative to a base sensor frame. Related components and methods are also provided.

A chromatically corrected imaging illumination optical unit serves for use in a lithographic projection exposure apparatus, for example for imaging, in a manner adapted to a downstream projection optical unit, an illumination conditioning field via an imaging beam path into an object field of the downstream projection optical unit. The illumination optical unit has at least seven and at most twelve lens elements in the imaging beam path. The illumination optical unit has an overall transmission for illumination light of at least 85%. Such an illumination optical unit can be used to improve a throughput of a projection exposure apparatus equipped therewith and achieve a high illumination quality.

A mirror device for a microlithographic projection exposure apparatus has at least one mirror. The mirror comprises a mirror body and a reflection surface formed on the mirror body. At least one depression is present and extends from a back side of the mirror body distant from the reflection surface through the mirror body in the direction of the reflection surface. The depression has, at the end facing the reflection surface, a measurement area thermally connected to the reflection surface and a sensor unit. The sensor unit is formed as an infrared temperature sensor and configured for contactless determination of the temperature of the measurement area vis--vis the measurement area.

A photolithography projection lens, having a plurality of lens elements and a light diaphragm arranged among them, arranged along an optical axis, and comprising an object side and an image side respectively arranged at the front and rear ends of the plurality of lens elements; wherein: the diopters of the two lenses respectively near the object side and the image side must be positive; each of the lens elements is a single lens without cement; the angle between the chief rays at different image height positions and the optical axis is <1 degree, and the angle between the chief rays at different object height positions and the optical axis is <1 degree; and under the projection of 350450 nm wavelength light, it provide the imaging effect of precise magnification.