An extreme ultraviolet lithography system (10) that creates a new pattern (330) having a plurality of densely packed parallel lines (332) on a workpiece (22), the system (10) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13B) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22) to create a first stripe (364) of generally parallel lines (332) during a first scan (365); and a control system (24). The workpiece (22) includes an existing pattern (233) that is distorted. The control system (24) selectively adjusts a control parameter during the first scan (365) so that the first stripe (364) is distorted to more accurately overlay the portion of existing pattern (233) positioned under the first stripe (364).

A method of manufacturing a semiconductor device by using an exposure apparatus having a reticle stage and a projection optical system includes a first period in which substrates are exposed by using a first reticle arranged on the reticle stage, a second period in which substrates are exposed by using a second reticle arranged on the reticle stage, and a third period which is between the first and second periods. The method includes changing, in at least part of the third period, the first reticle arranged on the reticle stage to the second reticle, and performing control, in the first and second periods, to adjust temperature distribution of an optical element of the projection optical system so as to reduce change in aberration of the projection optical system. The third period is shorter than the first period.

A method for swapping an optical system, such as a DUV mirror, of a projection exposure apparatus, comprises: a) raising the optical system along a centre axis of the optical system so that mount struts of the optical system pass out of contact with frame struts of a frame carrying the optical system; b) rotating the optical system about the centre axis so that the mount struts are arranged between the frame struts; c) lowering the optical system along the centre axis; and d) shifting the optical system perpendicularly to the centre axis so that the optical system is moved out of a housing.

An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

A method for vertical control of a lithography machine includes step 1, prior to a scanning exposure, controlling vertical measurement sensors to measure workpiece to obtain overall surface profile data of the workpiece; step 2, performing a global leveling based on the overall surface profile data of the workpiece; and step 3, during the scanning exposure of each exposure field, measuring a local surface profile of the workpiece in real time by the vertical measurement sensors and controlling at least one of a mask stage, a workpiece stage and a projection objective to move vertically according to a Z-directional height value, an Rx-directional tilt value and an Ry-directional tilt value corresponding to the local surface profile of the workpiece, to compensate for the local surface profile of the workpiece in real time, so that an upper surface of each exposure field coincides with a reference focal plane for the exposure field. This method enables flexible vertical control with high accuracy by providing multiple control options.

A method of determining a configuration of a projection system for a lithographic apparatus as an implementation of a quadratic programming problem with a penalty function. The method includes: receiving dependencies of one or more optical properties of the projection system on a configuration of a plurality of manipulators of the projection system; receiving a plurality of constraints which correspond to physical constraints of the manipulators; finding an initial configuration of the manipulators; and iteratively finding an output configuration of the manipulators. The iteration includes repeating the following steps: determining a set of the plurality of constraints that are violated; determining an updated configuration of the manipulators, the updated configuration of the manipulators being dependent on the set of the plurality of constraints that are violated and a penalty strength; and increasing the penalty strength. These steps are repeated until a convergence criterion is met.

An optical arrangement for use in an optical imaging device includes an optical element unit and a detection device and/or an actuating device. The optical element unit includes at least one optical element. The detection device determines in a plurality of M degrees of freedom in each case a detection value which is representative of a relative position or orientation of an element reference of the optical element in relation to a primary reference of the detection device in the respective degree of freedom. The detection device includes a plurality of N detection units, each of which outputs a detection signal which is representative of a distance and/or a displacement of the detection unit in relation to a secondary reference assigned to the optical element and the respective detection unit.

Embodiments disclosed herein include lithographic patterning systems for non-orthogonal patterning and devices formed with such patterning. In an embodiment, a lithographic patterning system comprises an actinic radiation source, where the actinic radiation source is configured to propagate light along an optical axis. In an embodiment, the lithographic patterning system further comprises a mask mount, where the mask mount is configurable to orient a surface of a mask at a first angle with respect to the optical axis. In an embodiment, the lithographic patterning system further comprises a lens module, and a substrate mount, where the substrate mount is configurable to orient a surface of a substrate at a second angle with respect to the optical axis.

As feature sizes of semiconductor chips shrink there is a need for tighter overlay between layers in a lithography process. This means more advanced and larger overlay corrections may be necessary to ensure that die are properly manufactured into chips, especially in reconstituted substrates where the die can shift in the process of creating the substrate. Systems and methods for correcting these overlay errors in a lithographic process are provided. Additional rotation (theta) and projected image size (mag) corrections can be made to correct overlay errors present in reconstituted substrates by adjusting the stage and the reticle. Furthermore, these adjustments can be made allowing site-by-site or zone-by-zone corrections instead of a one-time adjustment of the reticle chuck as has been done in the past. These corrections can alleviate some of the issues associated with fan-out wafer-level packaging (FOWLP) and fan-out panel-level packaging (FOPLP).

An optical element is configured to guide imaging light in projection lithography. The optical element has a main body and at least one optical surface carried by the main body. At least one compensation weight element, which is attached to the main body, serves for a weight compensation of a figure deformation of the optical surface caused by gravity. This results in an optical element with a small figure deformation at the use location.