The present invention relates to a lithographic apparatus, comprising: a projection system configured to project a patterned radiation beam onto a substrate, comprising optical elements, a sensor frame, a first position measurement system configured to measure a position of an optical element relative to the sensor frame, comprising a sensor adapted to monitor an optical element, with a sensor element mounted to the sensor frame, a sensor frame support supporting the sensor frame on a reference, a force measurement device adapted to generate force measurement data relating to force exerted on the sensor frame by the sensor frame support, a position control device adapted to control the relative position of the substrate and the patterned radiation beam wherein the position control device is configured to receive the force measurement data and to control said relative position based on at least the force measurement data.

A method of reducing an aberration arising during operation of a lithographic apparatus, the method comprising measuring the aberration to obtain an aberration signal, the aberration signal comprising a first component and a second component, wherein the first component of the aberration signal comprises a first frequency band and the second component of the aberration signal comprises a second frequency band, wherein the first frequency band comprises frequencies that are higher than frequencies comprised in the second frequency band, calculating a correction, wherein a first part of the correction is calculated based on the first component of the aberration signal, and applying the correction to the lithographic apparatus.

A light spot arrangement, a surface profile measuring method and a method for calculating control data for an exposure field are disclosed. The light spot arrangement includes a plurality of measuring light spots (100) which define at least one set of orthogonal line segments, wherein the measuring light spots (100) lying on the orthogonal line segments radiate outward from a center, with each of the orthogonal line segments defined by at least four measuring light spots. With this light spot arrangement comprising at least one set of orthogonal line segments defined by measuring light spots radiating outward from a center, readings of multiple ones of the light spots (100) can be acquired in real time, and exposure can be performed with real-time focusing and leveling based on a surface profile of the wafer (200) derived from a surface fitting process carried out on the readings.

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

An exposure apparatus includes a projection optical system configured to project, onto a substrate, exposure light for forming a pattern on the substrate; a light shielding member having an opening for allowing light reflected by the substrate to pass therethrough and a light receiving element configured to receive a light flux passing through the opening after being reflected by the substrate; and a control unit configured to perform focus control for changing a defocus amount representing a positional deviation between a condensed position of the exposure light and the substrate in accordance with the amount of light received by the light receiving element. The light shielding member is disposed at a position that is optically conjugate to the substrate in an in-focus state where the defocus is smaller than a predetermined amount.

A projection exposure apparatus for semiconductor lithography having a projection optical unit. The projection optical unit includes a sensor frame, a carrying frame, and a module. The module includes an optical element and actuators for positioning and orienting the optical element. The module is on the carrying frame, and the sensor frame is a reference for the positioning of the optical element. The module includes an infrastructure which includes interfaces for separating a module from the projection optical unit. A method exchanges the module of a projection optical unit of a projection exposure apparatus for semiconductor lithography, wherein the module includes an optical element, while the reference remains in the projection exposure apparatus.

According to one embodiment, there is provided an exposure apparatus which projects a pattern of an original onto a substrate by a projection optical system so as to expose the substrate. The exposure apparatus includes a substrate stage, an alignment detecting system, and a controller. The substrate stage holds the substrate on which shot areas each including multiple chip areas are placed. The alignment detecting system detects multiple first alignment marks placed in a peripheral region in a first chip area in the shot area. The controller obtains the first amount of positional deviation for the first chip area according to results of detecting the multiple first alignment marks and controls exposure conditions for the first chip area in the shot area according to the first amount of positional deviation.

An exposure method of performing an exposure operation of exposing a substrate via a projection optical system is provided. The method includes executing, in an exposure period in which the exposure operation is performed, aberration correction of the projection optical system to correct an aberration generated by performing the exposure operation, measuring, in a non-exposure period succeeding the exposure period, in which the exposure operation is not performed, an aberration of the projection optical system, and correcting the aberration of the projection optical system using a correction amount adjusted based on a result of the measurement so as to reduce a correction residual in the aberration correction of the projection optical system.

A microlithographic projection exposure apparatus is configured to move a substrate stage in a scanning direction during the exposure process. The apparatus includes a projection lens for imaging mask structures onto a substrate during the exposure process with a manipulation device configured to change an imaging scale of the projection lens in at least two directions independently from one another. The apparatus also includes a control apparatus configured to perform different corrections of the imaging scale by way of suitable control of the manipulation device in the scanning direction and transversely to the scanning direction.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.