Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

An imaging optical system, in particular a projection objective, for microlithography, includes optical elements to guide electromagnetic radiation with a wavelength in a path to image an object field into an image plane. The imaging optical system includes a pupil, having coordinates (p, q), which, together with the image field, having coordinates (x, y) of the optical system, spans an extended 4-dimensional pupil space, having coordinates (x, y, p, q), as a function of which a wavefront W(x, y, p, q) of the radiation passing through the optical system is defined. The wavefront W can therefore be defined in the pupil plane as a function of an extended 4-dimensional pupil space spanned by the image field (x, y) and the pupil (p, q) as W(x, y, p, q)=W(t), with t=(x, y, p, q).

An exposure apparatus includes a projection optical system configured to project, onto a substrate, exposure light for forming a pattern on the substrate; a light shielding member having an opening for allowing light reflected by the substrate to pass therethrough; and a light receiving element configured to receive a light flux passing through the opening after being reflected by the substrate. In the exposure apparatus, focus control for changing a defocus amount is performed in accordance with the amount of light received by the light receiving element.

An exposure apparatus according to the present invention includes a projection optical system projecting, onto a substrate, exposure light for forming a pattern on the substrate, a light shielding member having an opening for allowing the exposure light to pass therethrough, a focus detecting unit detecting a defocus amount representing a positional deviation between a condensed position of the exposure light and the substrate, a light receiving element receiving a light flux passing through the opening in the light shielding member after being reflected by the substrate, and a control unit moving the light shielding member in a direction of an optical axis of the projection optical system on the basis of a result of detection in the focus detecting unit. The focus detecting unit detects the defocus amount on the basis of the amount of light received by the light receiving element.

An optical arrangement of an imaging device for microlithography, particularly for using light in the extreme UV range, includes an optical element and a holding device for holding the optical element. The optical element includes an optical surface and defines a plane of main extension, in which the optical element defines a radial direction and a circumferential direction. The holding device includes a base element and more than three separate holding units. The holding units are connected to the base element and arranged in a manner distributed along the circumferential direction and spaced apart from one another. The holding units hold the optical element with respect to the base element. Each of the holding units establishes a clamping connection between the optical element and the base element. The clamping connection for each holding unit is separate from the clamping connections of the other holding units.

A microlithographic projection exposure apparatus is configured to move a substrate stage in a scanning direction during the exposure process. The apparatus includes a projection lens for imaging mask structures onto a substrate during the exposure process with a manipulation device configured to change an imaging scale of the projection lens in at least two directions independently from one another. The apparatus also includes a control apparatus configured to perform different corrections of the imaging scale by way of suitable control of the manipulation device in the scanning direction and transversely to the scanning direction.

A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

A method of manufacturing a semiconductor device includes: providing a first photoresist pattern on a wafer; measuring an overlay of the first photoresist pattern; generating a first overlay model function by a first overlay regression analysis of the measured overlay; and generating a second overlay model function by a second overlay regression analysis of a difference between the measured overlay and the first overlay model function.

The present disclosure provides an apparatus and a method for detecting an optimal focal plane of a lithographic projection objective lens, the apparatus comprising: an illumination means, a beam splitting means, a lens array, a mask plate, a reflecting device, a photoelectric detector and a controller. The illumination means may generate a collimated beam, which is transmitted through the beam splitting means, focused by the lens array to the mask plate for spatial-filtering, and then delivered to the lithographic projection objective lens. The reflecting device reflects a focused beam passing through the lithographic projection objective lens to generate a reflected beam. The photoelectric detector detects an intensity of the reflected beam from the reflecting device after being spatial-filtered via the mask plate and generates a beam intensity signal. The controller connects a workpiece table and the photoelectric detector and is configured to control a movement of the workpiece table and/or collect the beam intensity signal generated by the photoelectric detector. By utilizing the movement of the reflecting device along a direction of the optical axis of the lithographic projection objective lens, the present disclosure is capable of detecting the position of the optimal focal plane of the lithographic projection objective lens according to a change in an intensity of reflected beam under each field of view.

Techniques are disclosed for optical distortion reduction in projection systems for scanning projection and/or lithography. A projection system includes an illumination system configured to generate illumination radiation for generating an image of an object to be projected onto an image plane of the projection system. The illumination system includes a field omitting illumination condenser configured to receive the illumination radiation from a radiation source and provide a patterned illumination radiation beam to generate the image of the object, wherein the patterned illumination radiation beam comprises an omitted illumination portion corresponding to a ridge line of a roof prism disposed within an optical path of the projection system.