A lithography system for generating grating structures is provided having a multiple column imaging system located on a bridge capable of moving in a cross-scan direction, a mask having a grating pattern with a fixed spatial frequency located in an object plane of the imaging system, a multiple line alignment mark aligned to the grating pattern and having a fixed spatial frequency, a platen configured to hold and scan a substrate, a scanning system configured to move the platen over a distance greater than a desired length of the grating pattern on the substrate, a longitudinal encoder scale attached to the platen and oriented in a scan direction and at least two encoder scales attached to the platen and arrayed in the cross-scan direction wherein the scales contain periodically spaced alignment marks having a fixed spatial frequency.

Embodiments described herein provide a method of large area lithography. One embodiment of the method includes projecting at least one incident beam to a mask in a propagation direction of the at least one incident beam. The mask having at least one period of a dispersive element that diffracts the incident beam into order mode beams having one or more diffraction orders with a highest order N greater than 1. The one or more diffraction orders provide an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern includes a plurality of intensity peaks defined by sub-periodic patterns of the at least one period. The intensity peaks write a plurality of portions in the photoresist layer such that a number of the portions in the photoresist layer corresponding to the at least one period is greater than N.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

The present invention discloses an apparatus for making direct writing screen plate and a using method thereof. The present invention provides a direct writing screen plate making apparatus and a focal plane control method. A Z-axis controller is used to pre-establish a mapping relation between the focal plane position of the scanning band to be scanned in the next step and the scanning platform position signal. During the next step of scanning, the position of the optical lens is adjusted according to the mapping relation, thus avoiding the problem of inconsistency between the calculated focal plane and the actual focal plane caused by the position deviation between the assembled displacement sensor and the optical lens. The present invention also provides a method for exposing a region of interest and a method for compensating the on-line real-time light uniformity.

Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter device. The solid state emitter device includes an array of solid state emitters arranged in a plurality of horizontal rows and vertical columns. The variable intensity of each group of solid state emitters, for example an entire row or column of solid state emitters, is controllable for improved field brightness uniformity and stitching. Controlling the variable intensity includes, for example, varying the signal, such as voltage, that is applied to each of the rows of solid state emitters to attenuate the brightness from the middle of the array to the edges of the array to accommodate for overlapping exposures during photolithography processing.

An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

A reflective mask-less laser direct imaging system includes laser equipment that includes laser light sources, focusing lenses, a scanner and a compensating lens. The focusing lenses focus light beams onto a photosensitive layer of a substrate from the laser light sources. The scanner includes a rotatable polygonal mirror formed with multiple facets used to reflect the light beams to the substrate from the focusing lenses. The compensating lens includes a convex surface pointed at the polygonal mirror and a flat surface pointed at the compensating lens. The light beams go from the polygonal mirror into the compensating lens via the convex surface. The light beams leave the compensating lens via the flat surface before heading for the substrate.

Embodiments described herein provide a system, a software application, and a method of a lithography process, to write full tone portions and grey tone portions in a single pass. One embodiment includes a controller configured to provide mask pattern data to a lithography system. The controller is configured to divide a plurality of spatial light modulator pixels spatially by at least a grey tone group and a full tone group of spatial light modulator pixels. When divided by the controller, the grey tone group of spatial light modulator pixels is operable to project a first number of the multiplicity of shots to the plurality of full tone exposure polygons and the plurality of grey tone exposure polygons, and the full tone group of spatial light modulator pixels is operable to project a second number of the multiplicity of shots to the plurality of full tone exposure polygons.

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.

An exposure apparatus and method. The exposure apparatus includes a control system, light source system, plurality of illumination systems and plurality of projection objective lenses. The light source system is configured to emit a plurality of first illumination beams incident on the illumination systems. Each illumination system includes a variable attenuator and branch energy detector. The branch energy detector is configured to detect an illuminance level of a second illumination beam generated in the corresponding illumination system and feed it back to the control system. The control system is configured to adjust the illuminance levels of the second illumination beams in the respective illumination systems by controlling the respective variable attenuators therein. The exposure apparatus and method have improved exposure performance and allow finer and faster energy adjustments, thus enabling precise control and higher exposure accuracy.