A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the bow-tie and C-aperture are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

A digital masking system includes a supporting structure for supporting a material, and a pattern imaging apparatus. The pattern imaging apparatus includes a light source device, multiple imaging devices that convert light from the light source device into a plurality of light beams each representing an image, and a combiner that combines the light beams into a single light beam which is projected toward a material.

An exposure apparatus includes: a first light source that generates first exposure light, a diaphragm having plurality of openings positioned between the first light source and an exposure photomask, a plurality of first projection optical systems that individually project an optical image realized by the first exposure light transmitted through each of the plurality of openings on an exposure target, a second light source that generates second exposure light, and a correction stepper. The correction stepper irradiates a light amount correction region with the second exposure light so as to limit an irradiation range of the exposure target to be irradiated with the second exposure light transmitted through the exposure photomask, and the light amount correction region is a region extending in a first direction by a width of a multi-opening region in a second direction in a plan view.

A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the bow-tie and C-aperture are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

The present invention discloses a digital photolithography method for a fiber optic device (FOD) based on a DMD combination. In this method, reflected light modulated by two DMDs is simultaneously projected onto a same position on an optical fiber end surface through one reduction projection lens. The two DMDs form a primary and secondary digital mask for joint control of an exposure dose distribution formed when patterns are shrunk and projected onto the optical fiber end surface. After the optical fiber end surface coated with photoresist is subject to this dose of exposure, developing, fixing, and etching are conducted, to form a micro-optic device on the optical fiber end surface. In the present invention, distribution of the exposure dose jointly modulated by a digital mask combination formed by the primary and secondary DMD exceeds an order of modulation of an exposure dose by a single DMD.

A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.

A stepper (100) for lithographic processing of semiconductor substrates includes abase (102), a chuck (104) that moves only along an X axis of a coordinate system, a bridge (114) mounted over the base and the chuck, and at least one projection camera (112) mounted on the bridge. The at least one projection camera is movable along a Y axis of the coordinate system. The combined range of travel of the chuck along the X axis and the at least one projection camera along the Y axis is sufficient to address a field of view of the at least one projection camera to substantially an entire substrate (106) mounted on the chuck.

The present disclosure provides an optical compensation film, a photomask, and an exposure apparatus. The optical compensation film includes a first region of the optical compensation film and a second region of the optical compensation film. The first region of the optical compensation film is positioned to correspond to an overlapping portion of the prisms, and is configured to allow light to pass therethrough and impinge on the overlapping portion of the prisms. The second region of the optical compensation film is positioned to correspond to a non-overlapping portion of the prisms, and is configured to allow light to pass therethrough and impinge on the non-overlapping portion of the prisms. Light transmittance of the first region of the optical compensation film is greater than light transmittance of the second region of the optical compensation film.

Devices, systems, and/or methodologies are provided for three dimensional printing, for example, additive manufacturing, wherein an array of energy patterning (e.g., light patterning) modules are used in conjunction with an automated positional control system to coordinate impelementation of patterning modules of the array. Implementaion of the array can be controlled by a sensory feed-back.