A mask layout is received. An interaction-free mask model is applied to the mask layout. An edge interaction model is applied to the mask layout. The edge interaction model describes an influence due to a plurality of combinations of two or more edges interacting with one another. A thin mask model is applied to the mask layout. A near field is determined based on the applying of the interaction-free mask model, the applying of the edge interaction model, and the applying of the thin mask model.

A method for the exposure of image points of a photosensitive layer comprising a photosensitive material on a substrate by means of an optical system. The method including continuously moving the image points with respect to the optical system; and controlling a plurality of secondary beams by means of the optical system individually for individual exposures of each image point, whereby the secondary beams are put either into an ON state or into an OFF state, wherein a) secondary beams in the ON state produce an individual exposure of the image point assigned to the respective secondary beam and b) secondary beams in the OFF state do not produce any individual exposure of the image point assigned to the respective secondary beam; wherein, for the generation of image points with grey tones n>1, individual exposures are carried out by different secondary beams with individual doses D.

A method is provided that comprises printing FEM wafers having different predefined focus offsets and multiple corresponding sites, measuring signals from the sites, and quantifying a focus inaccuracy by comparing the measured signals from the corresponding sites across the wafers.

A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

A mask for Poisson spot suppression includes a plurality of petals equally spaced in a circular pattern, the petals comprising a gray scale lithography substrate, the substrate having an opaque center portion and a gradient of increasing transparency extending toward a perimeter of the circular pattern, the gradient effected by a gray scale lithography process.

A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.

A device includes a light source and a light guide. The light source is configured to emit photoresist-curative electromagnetic radiation. The light guide is arranged to receive the photoresist-curative electromagnetic radiation from the light source and to guide the received radiation by total internal reflection, the light guide including a pattern of emission points on at least one surface of the light guide, the emission points emitting the photoresist-curative electromagnetic radiation out of the light guide by frustration of total internal reflection caused by the emission points.

A method of manufacturing an integrated circuit (IC) includes receiving a design layout of the IC, wherein the design layout includes two abutting blocks, the two blocks include target patterns, and the target patterns have different pitches in the two blocks. The method further includes generating mandrel pattern candidates in spaces between adjacent target patterns, and assigning first and second colors to the mandrel pattern candidates according to their priorities. The method further includes removing the mandrel pattern candidates assigned with the second color, and outputting a mandrel pattern in computer-readable format for mask fabrication. The mandrel pattern includes the mandrel pattern candidates that are colored with the first color.

Methods for reducing reticle transmission differences and for optimizing layer placement for overlay in MTRs and CTRs are disclosed. Embodiments include providing a reticle having a prime area and a frame area surrounding the prime area; determining RT differences across the prime area; and providing RT adjustment structures on the reticle to decrease the RT differences. Other embodiments include grouping multiple layers of a semiconductor production flow, the layers for each group having an RT difference less than a predetermined value; and placing the layers on plural ordered reticles of a reticle set, each reticle having multiple image fields, by selecting, for each reticle, layers from a single group and optimizing placement of the layers for overlay. Other embodiments include selectively rotating image fields on a reticle having multiple image fields to improve overlay, or optimizing placement of DDLs on CTRs by placing each design orientation on a different reticle.

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern: an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.