Embodiments of the present disclosure provide a system and method for stabilizing optical lens temperatures, including detecting infrared radiation emitted from one or more optical lens, generating an infrared sensor signal based upon the detected infrared radiation, directing emission of light from one or more infrared light sources to the one or more optical lenses, and regulating the emission of the light from the one or more infrared light sources based on the infrared sensor signal for adjusting the temperature of the one or more optical lens.

A layout geometry of a lithographic mask is received. The layout geometry is partitioned into feature images, for example as selected from a library. The library contains predefined feature images and their corresponding precalculated mask 3D (M3D) filters. The M3D filter for a feature image represents the electromagnetic scattering effect of that feature image for a given source illumination. The mask function contribution from each of the feature images is calculated by convolving the feature image with its corresponding M3D filter. The mask function contributions are combined to determine a mask function for the lithographic mask illuminated by the source illumination.

A method of manufacturing a phase shift mask includes forming a doped silicon nitride layer on a mask substrate and forming an opaque layer on the doped silicon nitride layer. The opaque layer and doped silicon nitride layer are then patterned to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer. Portions of the opaque layer are then removed from some of the mask features.

A mask layout containing a non-Manhattan pattern is received. The received mask layout is processed. An edge of the non-Manhattan pattern is identified. A plurality of two-dimensional kernels is generated based on processed pre-selected mask layout samples. The two-dimensional kernels each have a respective rotational symmetry. The two-dimensional kernels are applied to the edge of the non-Manhattan pattern to obtain a correction field for the non-Manhattan pattern. A thin mask model is applied to the non-Manhattan pattern. The thin mask model contains a binary modeling of the non-Manhattan pattern. A near field of the non-Manhattan pattern is determined by applying the correction field to the non-Manhattan pattern having the thin mask model applied thereon. An optical model is applied to the near field to obtain an aerial image on a wafer. A resist model is applied to the aerial image to obtain a final resist image on the wafer.

An optical lithography system for patterning semiconductor devices and a method of using the same are disclosed. In an embodiment, an apparatus includes an optical path; a prism disposed on the optical path; a lens disposed on the optical path; and a tunable mirror disposed on the optical path, the tunable mirror including a mirror having a concave surface at a front-side thereof; a rear support attached to a backside of the mirror; and a plurality of fine-adjustment screws extending from the rear support to the backside of the mirror.

In a drive method for a spatial light modulator, out of a first boundary region and a second boundary region arranged adjacently in a Y-direction and extending in an X-direction, mirror elements arranged at a first pitch not resolved by a projection optical system, in the X-direction in the first boundary region are set in the phase 0, and the other mirror elements therein are set in the phase π; mirror elements arranged at a second pitch not resolved by the projection optical system, in the X-direction in the second boundary region are set in the phase π, and the other mirror elements therein are set in the phase 0.

A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

A method for improving a process model by measuring a feature on a printed design that was constructed based in part on a target design is disclosed. The method includes obtaining a) an image of the printed design from an image capture device and b) contours based on shapes in the image. The method also includes identifying, by a pattern recognition program, patterns on the target design that include the feature and determining coordinates, on the contours, that correspond to the feature. The method further includes improving the process model by at least a) providing a measurement of the feature based on the coordinates and b) calibrating the process model based on a comparison of the measurement with a corresponding feature in the target design.

A method for the exposure of image points of a photosensitive layer comprising a photosensitive material on a substrate by means of an optical system. The method including continuously moving the image points with respect to the optical system; and controlling a plurality of secondary beams by means of the optical system individually for individual exposures of each image point, whereby the secondary beams are put either into an ON state or into an OFF state, wherein a) secondary beams in the ON state produce an individual exposure of the image point assigned to the respective secondary beam and b) secondary beams in the OFF state do not produce any individual exposure of the image point assigned to the respective secondary beam; wherein, for the generation of image points with grey tones n>1, individual exposures are carried out by different secondary beams with individual doses D.