The embodiments of the present disclosure propose a negative refraction imaging lithographic method and equipment. The lithographic method includes: coating photoresist on a device substrate; fabricating a negative refraction imaging structure, wherein the negative refraction imaging structure exhibits optical negative refraction in response to beam emitted by exposure source; pressing a mask to be close to the negative refraction imaging structure; disposing the mask and the negative refraction imaging structure above the device substrate at a projection distance; and light emitted by the exposure source passes through the mask, the negative refraction imaging structure, the projection gap and is sequentially projected onto the photoresist for exposure.

The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

The present application relates to a film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and groove portions provided in a region where the darkened light-shielding pattern layer is not provided, a method for manufacturing the same, a method for forming a pattern by using the same, and a pattern manufactured by using the same.

Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

An improved stage for the processing of large, thin substrates, such as glass and semiconductor panels. Processing includes lithography, inspection, metrology, grinding, and the like. The stage includes a chuck that moves over a base relative to a device for processing a substrate. The chuck conforms to a geometry of the base while moving relative to the base.

Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

A system that contains a semi-ellipsoidal SLM holder supporting a plurality of flat rectangular SLMs, which are placed onto the semi-ellipsoidal surface of the holder in the most surface-covering way. The system contains a coherent light source placed in the first focal point of the ellipsoid. The second focal point of the ellipsoid defines the area in which an image-receiving object is to be placed. All the SLMs are illuminated by a diverging light beam emitted from the coherent light source. In each SLM, the light is subjected to phase-amplitude modulation and is converted into an image-carrying beam, which convergently fells onto the object on which the target image is to be produced. Thus, a pattern is formed on the object by a maskless method in which a plurality of SLMs are combined into a common image-forming holographic unit.

Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

A maskless exposure method includes spatially modulating a light output from a light source into a pattern beam having a mask pattern, condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of an object layer, and into a second group of spot beams having a second focal position different from the first focal position, and scanning the object layer with the first and second groups of spot beams. The object layer has a first height and a second height different from the first height.

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.