Embodiments of the present disclosure provide a system and method for stabilizing optical lens temperatures, including detecting infrared radiation emitted from one or more optical lens, generating an infrared sensor signal based upon the detected infrared radiation, directing emission of light from one or more infrared light sources to the one or more optical lenses, and regulating the emission of the light from the one or more infrared light sources based on the infrared sensor signal for adjusting the temperature of the one or more optical lens.

The present invention provides a mask plate, relating to a field of exposure technology, which can solve the problem of an existing mask plate that a resolution is limited by an effect of diffraction. The mask plate of the invention includes: a pattern structure, including a light blocking region and a light transmitting region; and a total reflection structure provided at an light-exiting side of the pattern structure, the total reflection structure including a high refraction layer and a first low refraction layer sequentially provided in a direction away from the pattern structure and contacting each other, wherein a refractive index of the high refraction layer is greater than a refractive index of the first low refraction layer.

Provided are a method of forming a mask, the method accurately and quickly restoring an image on the mask to the shape on the mask, and a mask manufacturing method using the method of forming the mask. The method of forming a mask includes obtaining first images by performing rasterization and image correction on shapes on the mask corresponding to first patterns on a wafer, obtaining second images by applying a transformation to the shapes on the mask, performing deep learning based on a transformation relationship between ones of the first images and ones of the second images corresponding to the first images, and forming a target shape on the mask corresponding to a target pattern on the wafer, based on the deep learning. The mask is manufactured based on the target shape on the mask.

The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane. The projection objective has at least one mirror segment arrangement comprising a plurality of separate mirror segments. Associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP). The partial beam paths are superposed in the image plane (IP). At least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.

A microlithographic apparatus includes an objective that includes a transmission filter that is configured to variably modify a light irradiance distribution in a projection light path. The transmission filter includes a plurality of gas outlet apertures that are configured to emit gas flows that pass through a space through which projection light propagates during operation of the microlithographic apparatus. The transmission filter further includes a control unit which is configured to vary a number density of ozone molecules in the gas flows individually for each gas flow. In this manner it is possible to finally adjust the transmittance distribution of the transmission filter.

An adjustment apparatus which is an optical system having an incident face and a light exit face that is parallel to the incident face. The optical system is disposed in an exposure device. The adjustment apparatus includes at least one wedge lens and a plurality of optical lenses configured such that at least one of focal plane adjustment, magnification adjustment and position adjustment for a field of view corresponding to the exposure device is made possible through changing relative positions of at least one pair of neighboring ones of the lenses. An adjustment method corresponding to the adjustment apparatus is also provided for the focal plane adjustment, magnification adjustment and position adjustment for the field of view corresponding to the exposure device.

A process of an extreme ultraviolet lithography is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask, an EUV radiation source and an illuminator. The process also includes exposing the EUV mask by a radiation, originating from the EUV radiation source and directed by the illuminator, with a less-than-three-degree chief ray angle of incidence at the object side (CRAO). The process further includes removing most of the non-diffracted light and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.

A method for controlling a microlithographic projection exposure apparatus includes: determining a wavefront error of the projection exposure apparatus; generating a travel vector, suitable for correcting the wavefront error, with travels for each zone of the optical manipulator; establishing a constraint parameter with respect to the travel for at least one zone of the optical manipulator; and checking the travels of the generated travel vector with respect to implementability.

An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.

An apparatus (e.g., a multi-spectral optical filter array, an optical wafer, an optical component) has an aperture mask printed directly thereon, the aperture mask including a positive or negative photoresist. The apparatus includes a substrate having the aperture mask printed on at least one of a light entrance surface or a light exit surface of the substrate so as to provide an aperture over a portion of the substrate. The photoresist from which the aperture mask is formed is photo-definable or non-photo-definable, and is deposited/printed to form the aperture mask on the substrate.