A component with a reflective substrate, a photoresist layer disposed on the reflective substrate, and a light diffusing layer sandwiched between the reflective substrate and the photoresist layer is provided. The light diffusing layer includes an outer metal oxide layer with an outer rough surface configured to diffuse laser light during laser interference lithography of the photoresist layer. The outer metal oxide is also configured to be reduced to a conductive metallic layer during electroplating of the substrate. The outer metal oxide layer includes a plurality of elongated light diffusing elements extending in an outward direction from the substrate such that the outer rough surface diffuses at least 90% of laser light during the laser interference lithography of the photoresist layer.

An optical element for reflecting radiation comprises: a substrate having first and second partial bodies put together at an interface; a reflective coating applied to a surface of the first partial body; a plurality of cooling channels running in the substrate in the region of the interface below the surface to which the reflective coating; a distributor in the substrate for connecting a coolant inlet to the plurality of cooling channels; and a collector in the substrate for connecting the plurality of cooling channels to a coolant outlet. The distributor and/or the collector extend, proceeding from the interface, further into the second partial body of the substrate than into the first partial body of the substrate. An optical arrangement, for example in an EUV lithography system, comprises: at least one such optical element; and a cooling device designed for flowing a coolant through the plurality of cooling channels.

An optical component comprises a first layer system exhibiting a first wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon, and at least one second layer system exhibiting a second wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon. The first layer system and the second layer system are arranged on different optical surfaces. The wavelength dependencies of the first and the second reflectivity curve at least partially compensate one another so that the relative deviation from a desired reflectivity curve which is linear or constant with respect to the wavelength is no more than 5% within the specified wavelength range for a resultant summated reflectivity for the first layer system and the at least one second layer system. An optical system, such as a microlithography projection exposure apparatus, can include such an optical component.

An optical element reflects radiation, such as EUV radiation. The optical element includes a substrate with a surface to which a reflective coating is applied. The substrate has at least one channel through which a coolant can flow. The substrate is formed from fused silica, such as titanium-doped fused silica, or a glass ceramic. The channel has a length of at least 10 cm below the surface to which the reflective coating is applied. The cross-sectional area of the channel varies by no more than +/−20% over the length of the channel.

Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

The invention relates to a device for measuring a substrate for semiconductor lithography, comprising an illumination optical unit, an imaging optical unit and a recording device arranged in the image plane of the imaging optical unit, a diffractive element being arranged in the pupil of the imaging optical unit.

The invention also relates to a method for measuring a substrate for semiconductor lithography with a measuring device, the measuring device comprising an imaging optical unit with a pupil, with the following method steps: arranging a diffractive element in the pupil of the imaging optical unit for producing a multifocal imaging, capturing the imaging of a partial region of the substrate, and evaluating the imaging.

A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.

A dynamic interference lithography (DIL) device is provided. The device includes a laser source configured for providing a laser beam, a substrate stage configured for mounting a substrate, an at least partially convex curved mirror, and a spatial filter configured to divide the laser beam into a first beam portion directed towards the at least partially convex curved mirror and a second beam portion directed towards the substrate. The first beam portion is reflected by the at least partially convex curved mirror towards the substrate to form an interference pattern on the substrate.

A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

A method for producing a reflecting optical element for a projection exposure apparatus (1). The element has a substrate (30) with a substrate surface (31), a protection layer (38) and a layer partial system (39) suitable for the EUV wavelength range. The method includes: (a) measuring the substrate surface (31), (b) irradiating the substrate (30) with electrons (36), and (c) tempering the substrate (30). Furthermore, an associated reflective optical element for the EUV wavelength range, a projection lens with a mirror (18, 19, 20) as reflective optical element, and a projection exposure apparatus (1) including such a projection lens.