Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.

A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

A system and method for patterning of a substrate at sub-micron length scales using interference lithography that includes a substrate; a chuck that promotes substrate motion; at least two EM beams; a beam phase controller, wherein the phase controller modifies phases of the EM beams with respect to each other creating an interference pattern; a displacement sensor that measures the substrate displacement; and a feedback control mechanism configured to monitor and synchronize the substrate motion with the interference pattern using the beam phase controller and the displacement sensor.

An exposure apparatus includes a projection system having an optical element via which an exposure beam is projected; an immersion area forming member having an opening through which the exposure beam is projected, the immersion area forming member having a liquid supply inlet facing downward, a liquid recovery outlet facing downward, and a liquid supply port disposed between the liquid supply inlet and the liquid recovery outlet; a frame by which the projection system and the immersion area forming member are supported; a first vibration isolator by which transmission of vibration from the frame to the projection system is limited; and a second vibration isolator by which transmission of vibration from the immersion area forming member to the frame is limited. A liquid immersion area is formed, using the immersion area forming member, on a portion of an upper surface of a substrate, which is exposed to the exposure beam.

Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.

In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.

An exposure apparatus exposes a substrate with illumination light via a liquid. A liquid immersion member of the exposure apparatus has a lower surface, a plurality of collection ports, and a plurality of supply ports. The lower surface has an opening through which illumination light passes. The collection ports are arranged at the lower surface to surround the opening, and the supply ports are arranged at the lower surface and between the opening and the collection ports to surround the opening, such that the liquid is supplied via the supply ports onto the substrate while the substrate is arranged opposite to a plane-convex lens of a projection optical system and such that the liquid is collected via the collection ports from the substrate.

A computer-implemented method for correcting a makeup or skin effect to be rendered on a surface region of an image of a portion of a body of a person. The method and system correcting the makeup or skin effect by accounting for image-specific light field parameters, such as a light profile estimate and minimum light field estimation, and rendering the corrected the makeup or skin effect on the image to generate a corrected image.

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.