An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

An information processing apparatus for acquiring an inspection condition for performing an inspection on a pattern formed by a lithography apparatus that forms a pattern on a substrate with an original includes an acquisition unit configured to acquire a second inspection condition to be applied in a case where an inspection is performed on a second pattern by inputting third information indicating a state of the lithography apparatus acquired when the second pattern is formed to a model, wherein the model is acquired by machine learning with learning data including first information indicating a state of the lithography apparatus acquired when a first pattern is formed and second information indicating a first inspection condition applied when an inspection is performed on the first pattern.

An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

In one aspect, there is provided a method of creating a microstructure pattern on an exterior surface of an aircraft, boat, automobile or other vehicle is disclosed. A layer of photopolymer (44) is applied to the top coat or substrate (43) by nozzles (45). The photopolymer is selectively irradiated to activate its photoinitiator and the unirradiated polymer is removed. The irradiation can be via a mask (49) which does not come into contact with the polymer, or via a beam splitting arrangement (63, 64) or a diffraction grating (71). The pattern can be formed by either leaving the exposed photopolymer in situ, or using the exposed photopolymer to mask the substrate, etching the substrate, and then removing the exposed photopolymer. In another aspect, there is provided a method 1100 comprising the step 1102 of applying a layer of photocurable material to the exterior surface, the step 1104 of irradiating the photocurable material with radiation including a predetermined irradiation intensity profile, and the step 1106 of removing uncured photocurable material to form the microstructure pattern. The radiation initiates curing of the irradiated photocurable material, causing a curing depth profile across the layer of the photocurable material corresponding to the selected intensity profile.

An apparatus for securing a printing screen frame is configured so that, when a piston rod moves backward due to the supply of air pressure, tensile force applied to a support frame of a printing screen unit by a coupling protrusion of a tension member is released and the printing screen unit can be replaced, and, when the piston rod moves forward as an elastic spring extends due to the stop of the supply of the air pressure, the coupling protrusion of the tension member is caught on the support frame of the printing screen unit and applies pressure thereto due to elastic force so as to tension the printing screen, and then reverse pressure can be applied thereto by using air pressure, as needed.

Described is a telecentric illuminator that can be used, for example, in a mask aligner system for semiconductor wafer processing or as part of a solar simulator system for characterization of solar cells. The telecentric illuminator includes a tapered optic, a lens group having a plurality of lenses and an aperture stop, and a hybrid Fresnel lens. The Fresnel lens is disposed at a position along the optical axis of the telecentric illuminator to generate a telecentric image of the aperture stop at an illumination plane. The Fresnel lens may have a curved central portion and the aperture stop may be apodized to achieve desired illumination characteristics and improve the resolution of a mask aligner system.

Micro- and nano-patterns in imprint layers formed on a substrate and lithographic methods for forming such layers. The layers include a plurality of structures, and a residual layer having a residual layer thickness (RLT) that extends from the surface of the substrate to a base of the structures, where the RLT varies across the surface of the substrate according to a predefined pattern.

A method for manufacturing a display panel includes: providing a first substrate and an exposure system, wherein the exposure system includes a light source module and a first shielding unit; disposing the first shielding unit at a position between the first substrate and the light source module in the initial state; moving the first shielding unit along a first direction; moving the light source module to pass through the first shielding unit along a second direction different from the first direction, and exposing the first substrate to the light emitted by the light source module; moving the light source module along the opposite direction of the second direction; and moving the first shielding unit back to the position between the first substrate and the light source module along the opposite direction of the first direction.

A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.

Micro- and nano-patterns in imprint layers formed on a substrate and lithographic methods for forming such layers. The layers include a plurality of structures, and a residual layer having a residual layer thickness (RLT) that extends from the surface of the substrate to a base of the structures, where the RLT varies across the surface of the substrate according to a predefined pattern.