A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

A photomask including a photomask body having a surface on which a mask pattern is formed and to be scanned and subjected to pattern transfer to a resist through a lens assembly including a connecting portion and a non-connecting portion. The mask pattern has a first region subjected to the pattern transfer at the connecting portion of the lens assembly and a second region subjected to the pattern transfer at the non-connecting portion. The mask pattern has, in at least one of the first and second regions, a corrected line width which is adjusted by calculation such that the resist is to have a target line width as designed. The corrected line width has a stepwise change in at least one of a scanning direction and a direction orthogonal to the scanning direction. The stepwise change is made by including a correction component based on a random number.

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

According to one embodiment, a correction plot in which a slit width is set different depending on overlay deviation in a shot region is generated. Then, a light-exposure scanning speed defined by a relative speed between a photomask stage with a photomask mounted thereon and a stage with a processing object mounted thereon is set, to obtain a desired light-exposure amount at each coordinate position, in accordance with the slit width in the correction plot. Then, a light-exposure process is performed, while controlling the slit width of a light-exposure slit, the photomask stage, and the stage, in accordance with the correction plot and the light-exposure scanning speed.

An extreme ultraviolet lithography system (10) that creates a new pattern (330) having a plurality of densely packed parallel lines (332) on a workpiece (22), the system (10) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13B) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22) to create a first stripe (364) of generally parallel lines (332) during a first scan (365); and a control system (24). The workpiece (22) includes an existing pattern (233) that is distorted. The control system (24) selectively adjusts a control parameter during the first scan (365) so that the first stripe (364) is distorted to more accurately overlay the portion of existing pattern (233) positioned under the first stripe (364).

A substrate stage device of an exposure apparatus is equipped with: a noncontact holder that supports, in a noncontact manner, a first area and at least a partial area of a second area, of a substrate, the second area being arranged side by side with the first area in the Y-axis direction; a substrate carrier that holds the substrate held in a noncontact manner by the noncontact holder, at a position not overlapping the noncontact holder in the X-axis direction; Y linear actuators and Y voice coil motors that relatively move the substrate carrier with respect to the noncontact holder in the Y-axis direction; X voice coil motors that move the substrate carrier in the X-axis direction; and actuators that move the noncontact holder in the X-axis direction.

An exposure apparatus according to the present invention includes an illumination optical system including a first optical modulation unit having a plurality of optical modulation elements, a second optical modulation unit having a plurality of optical modulation elements, and an imaging optical system forming optical images on a predetermined plane by using lights from the first optical modulation unit and the second optical modulation unit, and a projection optical system projecting the optical image formed on the predetermined plane onto a substrate.

Embodiments of the present disclosure generally provide improved photolithography systems and methods using a digital micromirror device (DMD). The DMD comprises columns and rows of micromirrors disposed opposite a substrate. Light beams reflect off the micromirrors onto the substrate, resulting in a patterned substrate. Certain subsets of the columns and rows of micromirrors may be positioned to the off position, such that they dump light, in order to correct for uniformity errors, i.e., features larger than desired, in the patterned substrate. Similarly, certain subsets of the columns and rows of micromirrors may be defaulted to the off position and selectively allowed to return to their programmed position in order to correct for uniformity errors, i.e., features smaller than desired, in the patterned substrate.

A movable body apparatus that moves a substrate equipped with: a substrate holder which can move in the X-axis and the Y-axis directions; a Y coarse movement stage can move in the Y-axis direction, a first measurement system acquiring position information on the substrate holder with heads provided at the substrate holder and a scale provided at the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage with heads at the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and the second measurement systems, and the first measurement system irradiates a measurement beam on the scale while moving the heads in the X-axis direction, and the second measurement system irradiates a measurement beam on the scale while moving the heads in the Y-axis direction.

A lithography apparatus and method is provided. The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.