An extreme ultraviolet lithography system (10) that creates a new pattern (330) having a plurality of densely packed parallel lines (332) on a workpiece (22), the system (10) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13B) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22) to create a first stripe (364) of generally parallel lines (332) during a first scan (365); and a control system (24). The workpiece (22) includes an existing pattern (233) that is distorted. The control system (24) selectively adjusts a control parameter during the first scan (365) so that the first stripe (364) is distorted to more accurately overlay the portion of existing pattern (233) positioned under the first stripe (364).

The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.

A plate to be positioned between a movable stage and a projection system of a lithographic apparatus, the plate having a surface to face the movable stage; an opening through the plate for passage of patterned radiation beam; one or more gas outlets in a side of the opening and in the surface of the plate, wherein the one or more gas outlets are configured to supply gas to a region between the movable stage and the projection system, wherein all of the one or more gas outlets in the surface of the plate are positioned such that, for each of such one or more gas outlets, a line that is both orthogonal to the surface and intersects the gas outlet does not intersect the patterning device at any point during the entire range of movement of the patterning device.

The present invention provides a control apparatus for performing synchronous control to synchronize driving of a second moving member so as to follow driving of a first moving member, including a feedforward control system that includes a calculator configured to obtain an input/output response of the second moving member and position deviations of the first moving member and the second moving member while driving the first moving member and the second moving member in synchronism with each other, and calculate a feedforward manipulated variable based on the input/output response of the second moving member and the synchronous error between the first moving member and the second moving member obtained from the position deviations of the first moving member and the second moving member.

According to one embodiment, there is provided a semiconductor device manufacturing system, including a storage unit, a specifying unit, a determination unit and an adjustment unit. The storage unit stores device information indicating a relationship between image formation performance of an exposure device used for manufacturing a semiconductor device and mechanical operation accuracy. The specifying unit specifies a constraint of the mechanical operation accuracy according to the device information and the required image formation performance. The determination unit determines whether or not a correction parameter of an exposure condition satisfies the constraint. The adjustment unit adjusts the correction parameter according to a determination result of the determination unit.

A maskless exposure apparatus includes a light source, an optical head including a light modulator and an optical system, and reflecting light from the light source to radiate the light to a substrate to be exposed, a stage supporting the substrate and moving the substrate in a scanning direction, where the substrate is rotated such that a reference line of the substrate is at a first angle with respect to the scanning direction, and an optical head rotating unit rotating the optical head. When patterns are formed on the substrate in a direction of a first row and an nth row that is substantially perpendicular to the reference line, the first angle is set such that illuminations accumulated, by a beam spot array, in first portions and second portions on the substrate respectively corresponding to the patterns of the first row and the patterns of the nth row vary.

The invention relates to a lithographic apparatus comprising: an actuation system for positioning an object; a control unit (CU) for controlling the actuation system; and a cooling system for cooling the actuation system, wherein the actuation system comprises a coil assembly (CA) including one or more coils (CO) as force generating members, wherein the cooling system comprises cooling element (CE) interacting with the coil assembly for cooling the coil assembly, and wherein the control unit is configured to control a temperature of the one or more coils to keep a magnitude of cyclic stress below a predetermined value.

A method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method includes determining a control profile for dynamic control of the illumination profile during exposure of an exposure field including the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of one or more individual functional areas. The optimizing may include a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.

Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter device. The solid state emitter device includes an array of solid state emitters arranged in a plurality of horizontal rows and vertical columns. The variable intensity of each group of solid state emitters, for example an entire row or column of solid state emitters, is controllable for improved field brightness uniformity and stitching. Controlling the variable intensity includes, for example, varying the signal, such as voltage, that is applied to each of the rows of solid state emitters to attenuate the brightness from the middle of the array to the edges of the array to accommodate for overlapping exposures during photolithography processing.

The present invention provides a control apparatus for performing synchronous control to synchronize driving of a second moving member so as to follow driving of a first moving member, including a feedforward control system that includes a calculator configured to obtain an input/output response of the second moving member and position deviations of the first moving member and the second moving member while driving the first moving member and the second moving member in synchronism with each other, and calculate a feedforward manipulated variable based on the input/output response of the second moving member and the synchronous error between the first moving member and the second moving member obtained from the position deviations of the first moving member and the second moving member.