An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.

Disclosed herein are methods of using a fluoro oil mask to prepare a beam pen lithography pen array.

Embodiments of the present disclosure generally provide improved photolithography systems and methods using a digital micromirror device (DMD). The DMD comprises columns and rows of micromirrors disposed opposite a substrate. Light beams reflect off the micromirrors onto the substrate, resulting in a patterned substrate. Certain subsets of the columns and rows of micromirrors may be positioned to the off position, such that they dump light, in order to correct for uniformity errors, i.e., features larger than desired, in the patterned substrate. Similarly, certain subsets of the columns and rows of micromirrors may be defaulted to the off position and selectively allowed to return to their programmed position in order to correct for uniformity errors, i.e., features smaller than desired, in the patterned substrate.

Disclosed is a lithography process on a sample with at least one emitter, the process including: putting at least one layer of resist above the sample; exciting one selected emitter with light through the at least one layer of resist; detecting light emitted by the excited selected emitter and determining a position of the selected emitter; and curing with a light beam a part of the at least one layer of resist above the position of the selected emitter, the light beam being a shaped light beam having a cross-section, this cross-section having a central part, an intermediate part surrounding the central part and a border part surrounding the intermediate part, the intensity of the shaped light beam on the at least one layer of resist reaching a maximum at the intermediate part.

Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter array. The solid state emitter array comprises solid state emitter devices arranged in rows and columns, wherein each solid state emitter device comprises two or more subpixels. Each solid state emitter device comprises one program gate which may transmit a voltage to a state storage node. The state storage node is in electrical communication with a drive gate. The drive gate is in communication with two or more solid state emitter subpixels. The arrangement of a plurality of subpixels in communication with a single drive gate allows more than one pulse to be delivered to the drive gate, resulting in illumination of more than one subpixel at each drive gate. The redundancy results in improved data efficiency.

Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter device. The solid state emitter device includes an array of solid state emitters arranged in a plurality of horizontal rows and vertical columns. The variable intensity of each group of solid state emitters, for example an entire row or column of solid state emitters, is controllable for improved field brightness uniformity and stitching. Controlling the variable intensity includes, for example, varying the signal, such as voltage, that is applied to each of the rows of solid state emitters to attenuate the brightness from the middle of the array to the edges of the array to accommodate for overlapping exposures during photolithography processing.

Embodiments of the present disclosure generally relate to an image projection system. The image projection system includes an active matrix solid state emitter (SSE) device. The active matrix solid state emitter includes a substrate, a silicon layer, and a emitter substrate. The silicon layer is deposited over the substrate having a plurality of transistors formed therein. The emitter substrate is positioned between the silicon layer and the substrate. The emitter substrate comprises a plurality of emitter arrays. Each emitter array defines a pixel, wherein one pixel comprises one or more transistors from the plurality of transistors. Each transistor is configured to receive a variable amount of current.

An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.

A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.

A method for manufacturing a display panel includes: providing a first substrate and an exposure system, wherein the exposure system includes a light source module and a first shielding unit; disposing the first shielding unit at a position between the first substrate and the light source module in the initial state; moving the first shielding unit along a first direction; moving the light source module to pass through the first shielding unit along a second direction different from the first direction, and exposing the first substrate to the light emitted by the light source module; moving the light source module along the opposite direction of the second direction; and moving the first shielding unit back to the position between the first substrate and the light source module along the opposite direction of the first direction.