A substrate handling apparatus for handling a substrate is disclosed. The substrate handling apparatus includes a substrate feeding device to feed the substrate towards an exposure area, a substrate receiving device to receive the substrate from the exposure area, and a substrate stabilization device to maintain, at least in the exposure area, the substrate substantially flat at an exposure height and/or tilt, the substrate stabilization device configured for contactless stabilization of the flexible substrate.

The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.

There is disclosed an exposure apparatus, a device manufacturing method and a method of manufacturing an attenuator. According to an embodiment, the exposure apparatus includes a programmable patterning device configured to provide a plurality of individually controllable radiation beams; a projection system configured to project each of the radiation beams onto a respective location on a target; and an attenuator configured to reduce a standard deviation in maximum radiation flux or background exposure level that can be applied to the target by the radiation beams as a function of position on the target.

A lithographic or exposure apparatus has a projection system and a controller. The projection system includes a stationary part and a moving part. The projection system is configured to project a plurality of radiation beams onto locations on a target. The locations are selected based on a pattern. The controller is configured to control the apparatus to operate in a first mode or a second mode. In the first mode the projection system delivers a first amount of energy to the selected locations. In the second mode the projection system delivers a second amount of energy to the selected locations. The second amount of energy is greater than the first amount of energy.

The invention is directed at an exposure head for use in an exposure apparatus for illuminating a surface, the exposure head comprising one or more radiative sources for providing one or more beams, an optical scanning unit arranged for receiving the one or more beams and for directing the beams towards the surface for impinging each of the beams on an impingement spot, a rotation actuating unit connected to the optical scanning unit for at least partially rotating the optical scanning unit, wherein the impingement spots of the one or more beams are scanned across the surface by said at least partial rotation of the optical scanning unit, wherein the optical scanning unit comprises a transmissive element including one or more facets for receiving the one or more beams and for outputting the beams after conveying thereof through the transmissive element, for displacing the beams upon said rotation of the transmissive element for enabling the scanning of the impingement spots.

A beam exposure device includes a light-emitting unit for emitting light beams from a plurality of light-emitting positions, a scan unit, an optical condensing system for condensing a spot of the light beams onto a surface to be exposed, and a micro-deflection unit for micro-deflecting the plurality of light beams to expose the space between the beams in the plurality of light beams. The optical condensing system includes a first microlens array arranged between the light-emitting unit and the micro-deflection unit and provided with a plurality of microlenses corresponding to the light-emitting positions; and a second microlens array arranged between the micro-deflection unit and the surface to be exposed and provided with a plurality of microlenses each microlens corresponding to the light-emitting unit.

A method and an apparatus for correcting a proximity effect of an electron beam. An initial dose of the electron beam is preset for each exposed square, and proximity effect energy representing an influence of exposing all exposed squares other than a current exposed square on the current exposed is calculated. A corrected dose of the electron beam for the current exposed square is then calculated, and the corrected dose for each exposed square in the electron beam exposure layout matrix is successively calculated. Then, the above calculation iterates for T times to obtain a final corrected dose of the electron beam for each exposed square.