A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.

A drawing apparatus includes a laser light source unit configured to output laser light; a scanning mirror unit configured to reflect and scan the laser light; a drawing control unit configured to control an output value of the laser light of the laser light source unit based on display image data so that a display image is drawn by the laser light in a range scanned by the scanning mirror unit; and an output adjustment control unit configured to control the laser light source unit so that characteristic detection laser light for adjusting the output value of the laser light is output outside a range in which the display image is drawn inside the range scanned by the scanning mirror unit. The output adjustment control unit controls the characteristic detection laser light to be intermittently output in one frame period.

A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

An electron beam exposure apparatus which exposes a wafer coated with an electron beam resist with an electron beam is equipped with: a stage that can be moved holding the wafer; an electron beam optical system that irradiates the wafer with an electron beam; and, an opening member, placed facing the wafer via a predetermined gap on the wafer side in the optical arrangement direction of the electron beam optical system, and having an opening through which the electron beam from the electron beam optical system passes.

A beam exposure device includes a light-emitting unit for emitting light beams from a plurality of light-emitting positions, a scan unit, an optical condensing system for condensing a spot of the light beams onto a surface to be exposed, and a micro-deflection unit for micro-deflecting the plurality of light beams to expose the space between the beams in the plurality of light beams. The optical condensing system includes a first microlens array arranged between the light-emitting unit and the micro-deflection unit and provided with a plurality of microlenses corresponding to the light-emitting positions; and a second microlens array arranged between the micro-deflection unit and the surface to be exposed and provided with a plurality of microlenses each microlens corresponding to the light-emitting unit.

It is possible to implement pattern formation and pattern manufacturing that eliminate the necessity of high-cost accurate positioning. A pattern manufacturing apparatus (100) includes a controller (101) and a laser projector (102). The controller (101) controls the laser projector (102) to form a pattern on a pattern forming sheet (130) placed on a stage (140). The laser projector (102) further includes an optical engine (121). The optical engine (121) irradiates the pattern forming sheet (130) with a light beam (122). The stage (140) has a hollow structure not to obstruct the optical path of the light beam (122). The pattern forming sheet (130) includes a light-transmitting sheet material layer and a photo-curing layer applied to the sheet material layer.

Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor.

A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

A scanning lithographic laser writer, comprises a substrate holder, an irradiation arrangement and a control unit. The irradiation arrangement has a laser source, a multi head modulator arrangement and at least two writing head arrangements. The irradiation arrangement is arranged for providing laser light, via the multi head modulator arrangement to the writing head arrangements to irradiate a substrate plane. The control unit is configured for controlling a relative mechanical displacement between a substrate holder and the writing head arrangements, and for controlling a sweep of laser light exiting therefrom. The multi head modulator arrangement is configured to split and modulate an input beam into at least one modulated beam for each of the writing head arrangements by use of an acoustic-optical crystal. The writing head arrangements are positioned to displace laser light exiting from the writing head arrangements with respect to each other.

A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.