A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Disclosed is a lithography process on a sample including at least one structure and covered by at least a lower layer of resist and a upper layer of resist the process including: using an optical device to image or determine, in reference to the optical device, a position of the selected structure and positions of markers integral with the sample; using an electron-beam device, imaging or determining the position of each marker in reference to the electron-beam device; deducing the position of the selected structure in reference to the electron-beam device; exposing to an electron beam the upper layer of resist above the position of the selected structure to remove all the thickness of the upper layer of resist above the position of the selected structure but none or only part of the thickness of the lower layer of resist above the position of the selected structure.

A projection exposure apparatus for semiconductor lithography has a connecting element for connecting a component of the apparatus to a supporting cooling structure of the apparatus. The connecting element has a receiving region for receiving the component, and the connecting element has a foot region for connecting the connecting element to the supporting cooling structure. At least one joint is arranged between the receiving and foot regions, and at least one heat conducting element is arranged between the receiving and foot regions. The heat conducting element is soft in the actuation direction of the joint and has a stiffness perpendicularly to the actuation direction of the joint that is at least twice as large as in the actuation direction of the joint.

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

The present invention relates firstly to a method for reproducing a stem cell niche of an organism. The invention further relates to a reproduction of a stem cell niche of an organism. According to the invention, an image of a tissue of an organism is generated, which tissue comprises at least one stem cell niche. The image is filtered in order to obtain a structural pattern of the imaged stem cell niche. In a further step, a lithographic mask is generated from the structural pattern. According to the invention, a starting material of a substrate is structured by means of indirect or direct application of the lithographic mask, whereby a structured substrate is obtained which represents the reproduction of the imaged stem cell niche of the organism. The reproduction can be characterised as biolithomorphic.

The embodiments described herein relate to a software application platform, which enhances image patterns resolution on a substrate. The application platform method includes running an algorithm to provide different target polygons for forming a pattern on a target. A minimum feature size which may be formed by a DMD is determined. For each target polygons smaller than the minimum feature size determining to line bias or shot bias the one or more target polygons to achieve an acceptable exposure contrast at the target polygon boundary. The one or more target polygons smaller than the minimum feature size are biased to form a digitized pattern on the substrate. Electromagnetic radiation is delivered to reflect off of a first mirror of the DMD when the centroid for the first mirror is within the one or more target polygons.

A method includes first step of forming first pattern in each of first region of a substrate by using scanning exposure apparatus, and second step of forming second pattern in each second region of the substrate having undergone the first step. Each second region includes at least two first regions, and in the first step, scanning direction in the scanning exposure apparatus is allocated to each of the at least two first regions. Combination of the scanning directions allocated to the at least two first regions is common to the second regions. The combination is determined such that the scanning directions of at least first regions, of the at least two first regions, which are arranged in a direction perpendicular to the scanning directions are alternately changed one by one.

The embodiments described herein relate to a software application platform, which enhances image patterns resolution on a substrate. The application platform method includes running an algorithm to provide different target polygons for forming a pattern on a target. A minimum feature size which may be formed by a DMD is determined. For each target polygons smaller than the minimum feature size determining to line bias or shot bias the one or more target polygons to achieve an acceptable exposure contrast at the target polygon boundary. The one or more target polygons smaller than the minimum feature size are biased to form a digitized pattern on the substrate. Electromagnetic radiation is delivered to reflect off of a first mirror of the DMD when the centroid for the first mirror is within the one or more target polygons.

A method of forming a pattern on a substrate includes forming a group of first patterns so as to define a first region on each of a plurality of substrates by using a projection exposure apparatus, and forming a group of second patterns so as to define a second region on the first region of each of substrates different from each other out of the plurality of substrates by using a plurality of imprint apparatuses. A plurality of second regions, which are respectively defined by the plurality of imprint apparatuses in the forming the group of second patterns, are different in shape but have a common component. In the forming the group of first patterns, the first regions are deformed in accordance with the common component.