An exposure mask includes an aligning portion and a boundary portion. The aligning portion may be aligned with pixel areas of a substrate and includes a first exposure member and a second exposure member. The boundary portion includes a first exposure element, a second exposure element, a third exposure element, and a fourth exposure element. The first exposure member, the first exposure element, and the second exposure element are positioned in a first row. The first exposure element is positioned between the first exposure member and the second exposure element and is larger than the second exposure element. The second exposure member, the third exposure element, and the fourth exposure element are positioned in a second row. The third exposure element is positioned between the second exposure member and the fourth exposure element and is smaller than the fourth exposure element. Each exposure member/element includes a light transmitter/blocker.

A photomask (2) for optical alignment and an optical alignment method. By aligning the tail ends of first light-transmission patterns (313) which form a first photomask figure (3), and aligning the front ends of second light-transmission patterns (413), which form a second photomask figure (4) in the photomask (2), the un-exposed or underexposed areas do not exist at the tail ends of first substrate units (11) and the front end of second substrate units (12) during the process of optical alignment, thereby the problem existed in the traditional optical alignment manufacture process, that the brightness of a display is not uniform due to existing unexposed or underexposed areas, is solved, meanwhile, the reduction of the distance between the first substrate units (11) and the second substrate units (12) on a substrate is facilitated, thereby the utilization rate of the substrate is improved.

A method for manufacturing semiconductor devices include steps of depositing a first photoresist over a first dielectric layer, first exposing the first photoresist to a first light-exposure using a first lithographic mask, and second exposing the first photoresist to a second light-exposure using a second lithographic mask. An overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure. The first dielectric layer is thereafter patterned to form a mask overlay alignment mark in the overlap region. The patterning includes etching the first dielectric layer form a trench, and filling the trench with a conductive material to produce the alignment mark. A second dielectric layer is deposited over the alignment mark, and a second photoresist is deposited over the second dielectric layer. A third lithographic mask is aligned to the second photoresist using the underlying mask overlay alignment mark for registration.

A mask, a stitching exposure method, a display panel, and a manufacturing method. The mask is used for manufacturing scan lines or data lines of a display panel by means of exposure; the mask plate is provided with a pattern area and a slit area located at the periphery of the pattern area; multiple exposure lines parallel to each other are provided in the pattern area; the multiple exposure lines are respectively continuous lines and used for manufacturing the scan lines or the data lines by means of exposure; the slit area is provided with a slit; the slit is used for disconnecting each scan line or data line at intermediate positions by means of exposure. The mask plate and the stitching exposure method can achieve disconnection of a scan line or a data line at intermediate positions in an exposure process.

An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.

A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

A semiconductor device includes first and second inspection mark regions having the same pattern including a plurality of overlay inspection marks, a first element region having a portion overlapping with the first inspection mark region, and a second element region having a portion overlapping with the second inspection mark region. The first and second element regions are adjacent to each other and have different areas. The first element region includes a first pattern aligned with a plurality of first overlay inspection marks. The second element region includes a second pattern aligned with a plurality of second overlay inspection marks.

Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

An exposure device is disclosed, including: a light source (1), an illumination module (2), a mask stage (5), a projection objective module, an imaging position adjustment module (4) and a wafer stage (6), disposed sequentially along a direction of light propagation, the imaging position adjustment module (4) including a plurality of adjustment elements (410) arranged individually, the projection objective module including a plurality of projection objectives (3) each having an FoV in positional correspondence with a respective one of the plurality of adjustment elements (410). The imaging position adjustment module (4) ensures satisfactory imaging quality and FoV stitching quality of the projection objectives (3) by performing translation, magnification, focal plane and other adjustments on an image formed by the projection objective module. The projection objective module is simpler as it does not contain any component or mechanism for imaging position adjustment.

A method of manufacturing a patterned substrate includes: providing an exposure mask, the exposure mask comprising: a plurality of inner light-shielding portions arranged in a lattice, a light-transmissive portion integrally connecting regions surrounding the plurality of inner light-shielding portions, and an outer light-shielding portion surrounding the light-transmissive portion; performing a plurality of exposures of a photoresist layer disposed on a substrate in a step-and-repeat-manner using the exposure mask, so as to form a plurality of inner projected parts corresponding to the inner light-shielding portions, the inner projected parts being aligned in a lattice as a whole; developing the photoresist layer on which the plurality of exposures have been performed; and etching the substrate using the developed photoresist layer as a mask; wherein, in the step of performing the plurality of exposures, a region corresponding to the light-transmissive portion formed by a predetermined one of the exposures and a region corresponding to the light-transmissive portion formed by another one of the exposures do not overlap each other on shortest straight lines connecting outermost inner projected parts formed by the predetermined exposure and respective inner projected parts formed by the another exposure that are located closest to the outermost inner projected parts of the predetermined exposure, while portions of the region corresponding to the light-transmissive portion formed by the predetermined exposure and portions of the region corresponding to the light-transmissive portion formed by the another exposure overlap each other in places other than the shortest straight lines.