A semiconductor structure includes a plurality of semiconductor dies, a first stitch structure disposed in the plurality of semiconductor dies, and a second stitch structure disposed in at least two adjacent semiconductor dies of the plurality of semiconductor dies. The semiconductor dies are arranged to form a column or a row. The first stitch structure crosses all interfaces between the semiconductor dies. The second stitch structure crosses an interface between the at least two adjacent semiconductor dies.

A mask is provided that includes a first graphic region and a second graphic region disposed along a first direction. The first graphic region comprises a first splicing exposure region. The second graphic region comprises a second splicing exposure region. The first splicing exposure region is used for, after being translated along a first vector, forming a first splicing auxiliary region, and the first splicing auxiliary region coincides with the second splicing exposure region.

A photomask according to an exemplary embodiment includes: a mask substrate; and a first test pattern and a second test pattern disposed along a first edge of the mask substrate, wherein the first test pattern has a first outer shape and a first inner shape, the second test pattern has a second outer shape, and the second outer shape of the second test pattern is larger than the first inner shape of the first test pattern and smaller than the first outer shape of the first test pattern.

A photomask set including a first photomask and a second photomask is provided. The first photomask includes a first pattern. The first pattern includes a first main portion and a first stitching portion connected to each other. The first stitching portion includes a first matching portion and a first overlapping portion connected to each other. The second photomask includes a second pattern. The second pattern includes a second main portion and a second stitching portion connected to each other. The second stitching portion includes a second matching portion and a second overlapping portion connected to each other. After the first photomask is aligned with the second photomask, the first matching portion matches the second matching portion, the first overlapping portion overlaps the second pattern, and the second overlapping portion overlaps the first pattern.

A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

A method of use for a lithographic tool includes scanning a substrate relative to a first micro-lens array (MLA) and a second MLA each having rows of lenslets. The first MLA has functional lenslets and extra lenslets and the scanning includes delivering light through the lenslets of the first MLA and second MLA to the substrate. The delivering includes delivering light through the functional lenslets to form a pattern on the substrate, the pattern having gaps caused by a positional or rotational misalignment between the functional lenslets of the first MLA and the second MLA. The delivering also includes delivering light through the extra lenslets to fill the gaps in the pattern.

An alignment exposure method and a method for fabricating a display substrate are disclosed. The alignment exposure method includes a first alignment exposure process and a second alignment exposure process. Multiple groups of alignment marks are provided at an edge of at least one side of the substrate in the first alignment exposure process. At least one group of mark structures are provided at an edge of at least one side of a mask employed in the second alignment exposure process. In multiple mask alignment processes in the second alignment exposure process, each group of the at least one group of the mark structures of the mask are aligned with groups of the alignment marks at a corresponding side of the substrate group by group. The alignment exposure method is employed to realize alignment exposure of a substrate with a size larger than a size of a mask.

A method for exposing a wafer using a plurality of charged particle beamlets. The method comprises identifying non-functional beamlets among the beamlets, allocating a first subset of the beamlets for exposing a first portion of the wafer, the first subset excluding the identified non-functional beamlets, performing a first scan for exposing the first portion of the wafer using the first subset of the beamlets, allocating a second subset of the beamlets for exposing a second portion of the wafer, the second subset also excluding the identified non-functional beamlets, and performing a second scan for exposing the second portion of the wafer using the second subset of the beamlets, wherein the first and second portions of the wafer do not overlap and together comprise the complete area of the wafer to be exposed.

The present disclosure provides a method for exposure and development, a system for controlling exposure and a system for exposure and development. The method for exposure and development is configured to expose and develop a substrate when the substrate having a size larger than that of a mask. The method includes: exposing and developing a plurality of different regions of the substrate by means of the mask respectively, wherein the plurality of different regions are pieced to form an entire region which needs to be exposed and developed.

A digital exposure device includes: a stage having a substrate seated thereon where a pattern is to be formed and moving in a scan direction; a data modification unit receiving design data and generating modified data by extending the design data; and a digital exposure unit receiving the design data and projecting a light controlled according to the design data on the substrate, wherein the modified data includes intermedial data corresponding to the size difference between an image of the design data and an image of the modified data and some of unit data forming the intermedial data are data obtained when unit data of the design data are shifted in any expansion direction.