A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

According to some embodiments, the present disclosure provides a method for determining wafer inspection parameters. The method includes identifying an area of interest in an IC design layout, performing an inspection simulation on the area of interest by generating a plurality of simulated optical images from the area of interest using a plurality of optical modes, and selecting, based on the simulated optical images, at least one of the optical modes to use for inspecting an area of a wafer that is fabricated based on the area of interest in the IC design layout.

A maintenance management method for a lithography system according to a viewpoint of the present disclosure includes organizing and saving operating information for each of lithography cells that are each an apparatus group formed of a set of apparatuses and form the lithography system, organizing and saving maintenance information on consumables for each of the lithography cells, calculating a standard maintenance timing for each of the consumables for each of the lithography cells based on the operating information and the maintenance information on the consumable for each of the lithography cells, creating a maintenance schedule plan for each of the lithography cells or for each of manufacturing lines based on the standard maintenance timing, information on a downtime, and information on a loss cost due to the downtime for each of the lithography cells or for each of the manufacturing lines, and outputting the result of the creation of the maintenance schedule plan.

According to one embodiment, in a defect inspection apparatus, a controller acquires an image of a second actual pattern in a first shot region which corresponds to a design pattern identical to a design pattern corresponding to a first actual pattern, which is consistent in a first comparison process, and which is consistent in a second comparison process. The controller replaces the image of one actual pattern of the first actual pattern and the second actual pattern in the first shot region with the image of the other actual pattern so as to generate a reference image of the first shot region. The controller compares the reference image and the image of the second shot region so as to perform a defect inspection of the second shot region.

A position detection apparatus configured to detect a pattern including a plurality of pattern elements formed on an object includes a control unit configured to detect the pattern by performing pattern matching between a template including a plurality of feature points and the plurality of pattern elements. While, performing pattern matching, the control unit changes positions of the plurality of feature points such that a correlation between an image and the template is within a predetermined allowable range.

A control equipment and a control method of a stepper are provided. The control equipment of the stepper includes an input device, a generating device and a processing device. The input device is configured to input a plurality of sample development patterns. The sample development patterns are obtained according to a plurality of sample focal length values. The generating device is configured to generate a plurality of generative categories corresponding to a plurality of generative focal length values by using a depth learning algorithm. The processing device is configured to analyze an estimated focal length value of the online development pattern according to the generative categories.

A control equipment and a control method of a stepper are provided. The control equipment of the stepper includes an input device, a generating device and a processing device. The input device is configured to input a plurality of sample development patterns. The sample development patterns are obtained according to a plurality of sample focal length values. The generating device is configured to generate a plurality of generative categories corresponding to a plurality of generative focal length values by using a depth learning algorithm. The processing device is configured to analyze an estimated focal length value of the online development pattern according to the generative categories.

Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.