A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

Diffraction models and scatterometry are used to reconstruct a model of a microscopic structure on a substrate. A plurality of candidate structures are defined, each represented by a plurality of parameters (p.sub.1, p.sub.2, etc.)). A plurality of model diffraction signals are calculated by simulating illumination of each of the candidate structures. The structure is reconstructed by fitting one or more of the model diffraction signals to a signal detected from the structure. In the generation of the candidate structures, a model recipe is used in which parameters are designated as either fixed or variable. Among the variable parameters, certain parameters are constrained to vary together in accordance with certain constraints, such as linear constraints. An optimized set of constraints, and therefore an optimized model recipe, is determined by reference to a user input designating one or more parameters of interest for a measurement, and by simulating the reconstruction process reconstruction. The optimized model recipe can be determined automatically by a parameter advisor process that simulates reconstruction of a set of reference structures, using a plurality of candidate model recipes. In the generation of the reference structures, restrictions can be applied to exclude unrealistic parameter combinations.

A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

A polarized image acquisition apparatus includes a division type half-wave plate, located opposite to the mask substrate with respect to an objective lens and near an objective lens pupil position, to arrange P and S polarized waves of the transmitted light having passed through the objective lens to be mutually orthogonal, a Rochon prism to separate trajectories of P and S polarized waves, an imaging lens to form images of P and S polarized waves having passed through the Rochon prism at image formation positions different from each other, a mirror, in a case where one of P and S polarized waves is focused/formed at one of the different image formation positions, to reflect the other wave at the other position, a first sensor to capture an image of one of P and S polarized waves, and a second sensor to capture an image of the other wave.

A method for reducing sticking of an object to a surface used in a lithography process includes receiving, at a control computer, instructions for a tool configured to modify the surface and forming, in a deterministic manner based on the instructions received at the control computer, a modified surface having a furrow and a ridge, wherein the ridge reduces the sticking by reducing a contact surface area of the modified surface. Another apparatus includes a modified surface that includes furrows and ridges forming a reduced contact surface area to reduce a sticking of an object to the modified surface, the ridges having an elastic property that causes the reduced contact surface area to increase when the plurality of ridges is elastically deformed.

Methods, systems, and apparatus for mapping high dimensional data related to a lithographic apparatus, etch tool, metrology tool or inspection tool to a lower dimensional representation of the data. High dimensional data is obtained related to the apparatus. The high dimensional data has first dimensions N greater than two. A nonlinear parametric model is obtained, which has been trained to map a training set of high dimensional data onto a lower dimensional representation. The lower dimensional representation has second dimensions M, wherein Mis less than N. The model has been trained using a cost function configured to make the mapping preserve local similarities in the training set of high dimensional data. Using the model, the obtained high dimensional data is mapped to the corresponding lower dimensional representation.

A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.

An EUV stocker and an EUV pod device is disclosed. The EUV stocker includes an AI driven dynamic control circuitry, an AI controlled safety interlock, and an independent air return control device. The EUV stocker includes a Mass Flow Control (MFC) that operates in conjunction with one or more valves. The EUV stocker further includes a hydrocarbon detecting assembly, oxygen detecting assembly, pressure detecting assembly, and temperature detecting assembly and more to maintain the required condition within the EUV stocker. The EUV stocker also includes automated transportation devices such as AMHS, OHT, MR, AGV, RGV, or the like to provide a safe EUV mask storage environment for operators.

Disclosed is a method of determining a complex-valued field relating to a structure, comprising: obtaining image data relating to a series of images of the structure, for which at least one measurement parameter is varied over the series and obtaining a trained network operable to map a series of images to a corresponding complex-valued field. The method comprises inputting the image data into said trained network and non-iteratively determining the complex-valued field relating to the structure as the output of the trained network. A method of training the trained network is also disclosed.

According to some embodiments, the present disclosure provides a method for determining wafer inspection parameters. The method includes identifying an area of interest in an IC design layout, performing an inspection simulation on the area of interest by generating a plurality of simulated optical images from the area of interest using a plurality of optical modes, and selecting, based on the simulated optical images, at least one of the optical modes to use for inspecting an area of a wafer that is fabricated based on the area of interest in the IC design layout.