A data transmission method of transmitting data of log information recorded in log data of a manufacturing apparatus to an external device includes: storing correspondence information between information of a first identifier and information of a second identifier, the first identifier being an identifier used to identify a thing about a process performed by the manufacturing apparatus and being shared by the manufacturing apparatus and the external device, the second identifier being an identifier used to identify a thing about a process performed by the manufacturing apparatus and being used by the manufacturing apparatus; and obtaining, based on the correspondence information, information of the first identifier corresponding to information of the second identifier recorded in log information, and transmitting data of the log information to which the obtained information of the first identifier has been added. The storing and the obtaining are executed by an information processing device.

A lithographic apparatus comprising a projection system comprising at least one optical component and configured to project a pattern onto a substrate. The lithographic apparatus further comprises a control system arranged to reduce the effects of heating and/or cooling of an optical component in a lithographic process. The control system is configured at least: to select at least one of a plurality of mode shapes to represent a relationship between at least one input in the lithographic process and an aberration resulting from the input and to generate and apply a correction to the lithographic apparatus based on the mode shape.

A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

Disclosed is a method of determining a complex-valued field relating to a structure, comprising: obtaining image data relating to a series of images of the structure, for which at least one measurement parameter is varied over the series and obtaining a trained network operable to map a series of images to a corresponding complex-valued field. The method comprises inputting the image data into said trained network and non-iteratively determining the complex-valued field relating to the structure as the output of the trained network. A method of training the trained network is also disclosed.

A method is described for modifying the mechanical properties of NIL materials. The method includes applying an imprint mask to a nano-imprint lithography (NIL) material layer to create an imprinted NIL material layer, with the NIL material layer comprised of a NIL material. The method further includes detaching the imprinted NIL material layer from the imprint mask, with the modulus level of the NIL material below a flexibility threshold to cause a shape of the imprinted NIL material layer to remain unchanged after detachment. The modulus level of the NIL material of the imprinted NIL material layer is increased beyond a strength threshold to create a first imprint layer, with the imprint layer having a structure that remains unaffected by a subsequent process to form a second imprint layer matching a master mold pattern.

A position detection apparatus configured to detect a pattern including a plurality of pattern elements formed on an object includes a control unit configured to detect the pattern by performing pattern matching between a template including a plurality of feature points and the plurality of pattern elements. While, performing pattern matching, the control unit changes positions of the plurality of feature points such that a correlation between an image and the template is within a predetermined allowable range.

A method of correcting aberrations caused by a projection system of a lithographic apparatus, the method including performing a measurement of an aberration caused by the projection system using a sensor located in the lithographic apparatus, determining, based on a history of operation of the lithographic apparatus since a change of machine state, whether to average the measured aberration with one or more aberration measurements previously obtained using the sensor, calculating a correction to be applied to the lithographic apparatus using the measured aberration if it is determined that averaging should not be performed, calculating a correction to be applied to the lithographic apparatus using an averaged aberration measurement if it is determined that averaging should be performed, and applying the calculated correction to the lithographic apparatus.

The present invention provides a lithography apparatus which performs a process of forming a pattern on a substrate conveyed from a coating apparatus which coats the substrate with a resist, the lithography apparatus including an obtaining unit configured to obtain, from the coating apparatus, first specifying information which specifies a processing target substrate conveyed from the coating apparatus to the lithography apparatus, out of a plurality of substrates which are coated with the resist by the coating apparatus and on which the process is to be performed, and a processing unit configured to select offset correction information corresponding to the processing target substrate from a plurality of pieces of offset correction information respectively corresponding to the plurality of substrates based on the first specifying information and perform the process on the processing target substrate by using the selected offset correction information.

According to one embodiment, wafer lithography equipment includes an exposure unit transferring a circuit pattern onto a wafer, a measurement unit measuring a dimension of the circuit pattern and a calculator. The calculator includes calculating a first difference. The first difference is the difference between a first dimension and a second dimension. The first dimension is obtained by substituting a first exposure amount and a first focus distance into an approximate response surface function. The second dimension is measured by the measurement unit. The calculator also includes calculating a second difference. The second difference is the sum total of the first difference for all of the circuit patterns. The calculator also includes calculating a second exposure amount and a second focus distance causing the difference between the approximate response surface function and the second difference to be a minimum. The calculator also includes calculating a correction exposure amount.

A method for obtaining a training data set including synthetic metrology data, the training data set being configured for training of a model relating to a manufacturing process for manufacturing an integrated circuit. The method includes obtaining behavioral property data describing a behavior of a process parameter resultant from the manufacturing process and/or a related tool or effect. Additionally, or alternatively metrology data performed on a structure formed by the manufacturing process and/or a similar manufacturing process may be obtained. Using the behavioral property data and/or metrology data, synthetic metrology data is determined, which describes the effect of variations in the manufacturing process, and/or a related tool or effect on the process parameter. The model is trained using the training data set including the synthetic metrology data.