A method of generating a test for a radiation source for a lithographic apparatus comprises a step of receiving data corresponding to a plurality of firing patterns of the radiation source. The method further comprises the step of analyzing the data to determine parameters for configuring one or more further firing patterns for testing the radiation source. The parameters are determined such that a stability of the radiation source when executing the one or more further firing patterns configured using the parameters is substantially the same as, or within predefined bounds relative to, a stability of the radiation source when executing the plurality of firing patterns. Furthermore, parameters are determined such that a total duration of the one or more further firing patterns when executed by the radiation source will be less than a duration of the plurality of firing patterns when executed by the radiation source.

In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

Methods and systems for determining one or more characteristics of light in an optical system are provided. One system includes first detector(s) configured to detect light having one or more wavelengths shorter than 190 nm emitted from a light source at one or more first angles mutually exclusive of one or more second angles at which the light is collected from the light source by an optical system for illumination of a specimen and to generate first output responsive to the light detected by the first detector(s). In addition, the system includes a control subsystem configured for determining one or more characteristics of the light at one or more planes in the optical system based on the first output.

The present invention provides an illumination optical system for illuminating an object, comprising: a first light-transmissive member and a second light-transmissive member, and a control unit configured to control drive of the first light-transmissive member and the second light-transmissive member, therein, while the control unit drives the first light-transmissive member such that an incident angle of light to the first light-transmissive member increases, the control unit drives the second light-transmissive member such that the incident angle of light to the second light-transmissive member decreases, thereby changing the intensity of the light exiting from the illumination optical system.

Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

An abnormality detection apparatus for detecting an abnormal operation in a shutter apparatus configured to block light includes one or more memories, and one or more processors that cooperate with the one or more memories to detect the abnormal operation using an abnormality detection model that outputs determination data for detecting the abnormal operation in a case where information about measurement data on the shutter apparatus is input to the abnormality detection model.

A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.