A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

An extreme ultraviolet light source apparatus includes a disc-shaped cathode rotating about an axis, a disc-shaped anode rotating about an axis, an energy beam irradiation device irradiating a plasma raw material on the cathode with an energy beam to vaporize the plasma raw material, a power supply for causing a discharge between the cathode and the anode for generating a plasma in the gap between the cathode and the anode to emit extreme ultraviolet light, and an irradiation position adjusting mechanism for adjusting a position at which the cathode is irradiated with the energy beam. The cathode, the anode, and the irradiation position adjusting mechanism are accommodated in a housing. A photography device is disposed outside the housing and is configured to photograph a visible-light image of a vicinity of the cathode and the anode, the vicinity including visible light emitted from the plasma.

A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.

An extreme ultraviolet light generation system includes a chamber, a target supply unit supplying a target substance to a plasma generation region including a first point in the chamber, a window allowing pulse laser light with which the target substance is irradiated to pass therethrough, an EUV light concentrating mirror concentrating extreme ultraviolet light generated at the first point on a second point, a planar mirror arranged on an optical path of the extreme ultraviolet light reflected by the EUV light concentrating mirror and between the first and second points, an actuator causing the second point to be switched between a first position and a second position, a connection portion connectable to an external apparatus, a first EUV measurement unit on which the extreme ultraviolet light having passed through the second position is incident, and a processor controlling the actuator based on a signal from the external apparatus.

In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

An exposure mask includes a pattern part exposed to light to form a pattern on a substrate, a surrounding part that surrounds a periphery of the pattern part, and correcting pattern parts disposed on the surrounding part. The correcting pattern parts are disposed in a line along an edge of the pattern part. A correcting method of an exposure apparatus includes correcting a light supply direction of a light supply unit based on a movement direction and a speed of the light supply unit, exposing light in the corrected light supply direction, forming exposure patterns by exposing light to correcting pattern parts, determining whether an error occurs in the light supply direction by using the exposure patterns, and correcting the light supply direction based on the determined error.

A laser apparatus includes a first optical element, a second optical element, a first actuator configured to change a first wavelength component included in a pulse laser beam by changing a posture of the first optical element, a second actuator configured to change a second wavelength component included in the pulse laser beam by changing a posture of the second optical element, a first encoder configured to measure a position of the first actuator, a second encoder configured to measure a position of the second actuator, and a processor. The processor reads a first relation and a second relation and performs control of the first actuator based on the first relation and the position of the first actuator measured by the first encoder and control of the second actuator based on the second relation and the position of the second actuator measured by the second encoder.