Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

A device for measuring reference points in real time during lithographic printing includes a light source providing an exposure beam; a light modulator modulating the exposure beam according to an exposure pattern; a measurement system configured to measure a position of a number of alignment marks previously arranged on a substrate; and an exposure optical system comprising a control unit. The exposure optical system delivers the modulated exposure beam as an image provided by the light modulator onto the substrate. The exposure system control unit is configured to calculate the orientation of the substrate based on the position of the alignment marks and control the delivering of the modulated exposure beam relative to the calculated orientation of the substrate.

A laser gas regenerating apparatus regenerates a discharged gas discharged from at least one ArF excimer laser apparatus and supplies the regenerated gas to the at least one ArF excimer laser apparatus connected to a first laser gas supply source that supplies a first laser gas and to a second laser gas supply source that supplies a second laser gas. The laser gas regenerating apparatus includes a data obtaining unit that obtains data on a supply amount of the second laser gas supplied to the at least one ArF excimer laser apparatus; a xenon adding unit that adds, to the regenerated gas, a third laser gas; and a control unit that controls, based on the supply amount, an addition amount of the third laser gas by the xenon adding unit.

A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

The present application provides a dynamic illumination method based on a scan exposure machine, providing a mask used for exposure and a GDS file corresponding to the mask; dividing pattern information on the mask into n areas with the same width along the direction of movement of the mask during the exposure; performing SMO computation on the pattern information in the n areas, so as to generate n SMO files corresponding to the n areas respectively; performing combinatorial optimization on the n SMO files to obtain a DSMO file; generating a driver of a light source reflector array according to the DSMO file, the illumination; and controlling a reflector array of an exposure machine by calling the driver of the light source reflector array. The DSMO method is performed in each exposure slit area, so as to improve the illumination optimization for a pattern.

In one embodiment, a writing data generating method is for generating writing data used in a multi charged particle beam writing apparatus. The method includes calculating, for a figure containing a curve and a straight line included in design data, a plurality of control points representing the curve and a plurality of vertices of the curve and straight line, and expressing a position of each of the control points and vertices as a displacement from an adjacent control point or vertex to generate the writing data.

A system for exposing a material with images includes an exposure table and an electronic light projector arranged above the exposure table. The system is adapted to project images towards a material arranged at the exposure table. The electronic light projector and the exposure table are configured to be moved relative to each other during exposure. The electronic light projector is connected to a projector control unit configured to provide a sequence of images to be exposed represented by image data and superimpose a static image pattern onto the edge sections of the images to be exposed, resulting in a sequence of combined images. The width of the static image pattern is slimmer than the image to be exposed. The electronic light projector is configured to expose the combined images sequentially onto the material.

An extreme ultraviolet light generation apparatus may include a chamber; a droplet generator configured to sequentially supply a first droplet of target substance to a plasma generation region in the chamber; and a gas flow generation device having a gas outlet for causing gas to flow along a travel direction of the first droplet around at least a part of a trajectory of the first droplet. Here, the droplet generator includes a vibrating element configured to generate, by applying vibration to a nozzle through which the target substance is output, a plurality of second droplets each having smaller volume than the first droplet and to cause the second droplets to be combined to generate the first droplet, and the gas outlet is located downstream, on a trajectory direction of the first droplet, of a position where the second droplets are combined and the first droplet is generated.

According to one embodiment, a drawing method includes acquiring a first arrangement information indicating an arrangement state of a stepped portion on a substrate. The method further includes acquiring a height information indicating a height of the stepped portion. The method further includes measuring a height of the substrate. The method further includes calculating a focus map indicating a distribution of beam focus values of an electron beam according to a drawing location on the substrate on a basis of the acquired first arrangement information and the height information, and the measured height of the substrate. The method further includes drawing a pattern on the substrate by an electron beam with a beam focus value determined on a basis of the calculated focus map.