A stage for supporting a semiconductor substrate is disclosed. The stage includes a platform that defines a plurality of apertures, and a plurality of burls that protrude from the apertures, where the plurality of burls have support surfaces for supporting a region of the semiconductor substrate. The stage includes an actuator coupled to at least a first burl included in the plurality of burls, wherein the actuator is operable to adjust an elevation of a first support surface of the first burl relative to the platform, and control circuitry that controls operation of the actuator to establish a substantially-planar alignment of the support surface of the first burl with a support surface of at least a second burl included in the plurality of burls.

A method for providing a wear-resistant material on a body. A composite body that may be obtained by the method. The composite body may be a substrate holder or a reticle clamp for use in a lithographic apparatus. The method includes providing a body made of glass, ceramic or glass-ceramic; providing a wear-resistant material having a hardness of more than 20 GPa; and brazing or laser welding the wear-resistant material to the body.

A mask chuck may include a base plate including a central region and an edge region surrounding the central region, a head part including a first surface connected to the edge region of the base plate and configured to move on the edge region to be close to the central region or away from the central region, and a pad part disposed on a second surface of the head part opposite to the first surface of the head part. The edge region may include a first edge region extending in a first direction, a second edge region extending in the first direction and spaced apart from the first edge region in a second direction crossing the first direction, a third edge region extending in the second direction, and a fourth edge region extending in the second direction and spaced apart from the third edge region in the first direction.

An improved stage for the processing of large, thin substrates, such as glass and semiconductor panels. Processing includes lithography, inspection, metrology, grinding, and the like. The stage includes a chuck that moves over a base relative to a device for processing a substrate. The chuck conforms to a geometry of the base while moving relative to the base.

A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

A substrate with a backside surface configured to provide a friction switch when the substrate is loaded onto a substrate holder in a substrate-loading cycle, wherein the substrate backside surface has a molecular assembly including at least one high-interaction region and at least one low-interaction region. Further, there is provided methods using such a substrate and methods for creating such a substrate.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A method comprises loading a wafer onto a wafer chuck of a lithography apparatus, projecting an extreme ultraviolet light through an opening of a frame structure of the lithography apparatus, onto the wafer, and introducing an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer. The airflow forms an air curtain around the wafer, and shields the wafer from contaminants from the frame structure or a wafer stage.

An electrostatic clamp for supporting a substrate includes a substrate region, an electrode region at an edge of the substrate region, a support layer, an electrically conductive layer, a contact layer, and an electrode. The support layer has a body having first and second surfaces that are substantially parallel to each other and disposed on opposite sides of the body. A through-hole is disposed in the electrode region and provides access between the first and second surfaces. The electrically conductive layer is disposed on the second surface of the support layer. The contact layer disposed on the electrically conductive layer. The contact layer is uninterrupted in the electrode region and comprises burls in the substrate region. The burls contact the substrate when the electrostatic clamp is supporting the substrate. The electrode is disposed in the through-hole and is electrically coupled to the electrically conductive layer.

A method for unloading a substrate from a support table configured to support the substrate, the method including: supplying gas to a gap between a base surface of the support table and the substrate via a plurality of gas flow openings in the support table, wherein during an initial phase of unloading the gas is supplied through at least one gas flow opening in an outer region of the support table and not through any gas flow opening in a central region of the support table radially inward of the outer region, and during a subsequent phase of unloading the gas is supplied through at least one gas flow opening in the outer region and at least one gas flow opening in the central region.