Provided is a substrate deforming device for proximity exposure, the device comprising: a mask holder for holding an exposure mask; a first plate which is spaced apart from the exposure mask in a certain direction, and holds a to-be-exposed substrate; a position adjustment part for adjusting the position of the exposure mask; a gap adjustment part for adjusting a gap between the exposure mask and the to-be-exposed substrate; a first sensor for measuring the position of at least one among the exposure mask and the to-be-exposed substrate; a second sensor for measuring the gap between the exposure mask and the to-be-exposed substrate; and a control unit which performs a first control according to the measurement result from the first sensor, and after the first control, performs a second control according to the measurement result from the second sensor. The first control reduces the relative distance between the exposure mask and the to-be-exposed substrate by means of the position adjustment part. The second control deforms the to-be-exposed substrate by means of the gap adjustment part in response to deflection of the exposure mask.

The present invention relates to a method, an apparatus and a computer program for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography.

A method for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography, is described, which method comprises the following steps: 1a.) generating at least one particle beam vortex; and 1b.) using the particle beam vortex for analyzing and/or processing of the mask.

A sensor includes two shear-mode piezoelectric transducers, wherein each piezoelectric transducer has a bottom surface and a top surface, wherein the top surfaces of the piezoelectric transducers are rigidly connected to each other, and wherein the bottom surfaces of the piezoelectric transducers are configured to be attached to an object to be measured.

Methods and systems for measuring a distance include measuring a first interference pattern between a lens and a target surface using a light source at a first wavelength. A second interference pattern is measured between the lens and the target surface using a light source at a second wavelength, different from the first wavelength. An absolute measurement of a distance between the lens and the target surface is determined based on the first interference pattern and the second interference pattern.

A lithographic apparatus includes a support configured to hold an object, the support being moveable relative to a reference structure in a direction; a first position measurement system configured to provide a first measurement signal in a first frequency range, the first measurement signal representative of a position of the support relative to the reference structure in the direction; a second position measurement system configured to provide a second measurement signal in a second frequency range, the second measurement signal representative of the position of the support relative to the reference structure in the direction; and a processor configured to (a) filter the first measurement signal so as to attenuate a signal component having a frequency in the second frequency range, (b) filter the second measurement signal so as to attenuate a signal component having a frequency in the first frequency range, and (c) combine the filtered first measurement signal and the filtered second measurement signal into a combined measurement signal representative of the position of the support relative to the reference structure in the direction.

An encoder head includes one or more components arranged to: i) direct a first incident beam to the diffractive encoder scale at a first incident angle with respect to the encoder scale; ii) receive a first return beam from the encoder scale at a first return angle, the first return angle being different from the first incident angle; iii) redirect the first return beam to the encoder scale as a second incident beam at a second incident angle; and iv) receive a second return beam back from the encoder scale at a second return angle, the second return angle being different from the second incident angle, in which a difference between the first incident angle and second incident angle is less than a difference between the first incident angle and the first return angle and less than a difference between the second incident angle and the second return angle.

Various embodiments of aligning wafers are described herein. In one embodiment, a photolithography system aligns a wafer by averaging individual via locations. In particular, some embodiments of the present technology determine the center locations of individual vias on a wafer and average them together to obtain an average center location of the set of vias. Based on a comparison of the average center location to a desired center location, the present technology adjusts the wafer position. Additionally, in some embodiments, the present technology compares wafer via patterns to a template and adjusts the position of the wafer based on the comparison.

The invention provides a stage apparatus comprising an object support, a plurality of support members, a gripper and a control unit. The object support comprises a surface for mounting an object on, the surface extending in a plane. The plurality of support members are for supporting the object, and are arranged to receive the object from a gripper and to arrange the object on the surface and/or vice versa. The support members are moveable in at least a first direction which is perpendicular to the plane. The control unit is arranged to receive shape information regarding an out-of-plane-shape of the object, and is arranged to control positions of the support members. The control unit is arranged to tilt the object while supported by the support members by controlling the positions so as to reduce a space consumption of the object in the first direction, based on the shape information.

A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.