A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer over a wafer stage. The method also includes supplying an initial voltage to a plurality of electrodes of the wafer stage based on a topology of the semiconductor wafer, wherein the electrodes of the wafer stage are electrically isolated from each other. The method further includes measuring an adjusted topology of the semiconductor wafer after the initial voltage is supplied. In addition, the method includes supplying different first adjusted voltages to the electrodes of the wafer stage according to the adjusted topology of the semiconductor wafer.

The present disclosure is directed to EUV mask inspection tools including a source assembly that generates a EUV beam, a detector assembly having a projection optics system, a processor, a movable stage supporting a patterned mask, a stage control system, and a processor programmed to set the height for the stage based on instructions of a first program module that analyzes and combines mask pattern data and mask layout information to generate an out-of-plane distortion map. In an aspect, a second program module generates instructions to analyze inspection results outputted by the inspection tool to generate a defocus characterization map. In a further aspect, a present method provides predictive data and actual measured data to determine stage heights for use by a present mask inspection tool for inspection of patterned EUV masks to obtain results that compensate for defocusing to due to bowing of the patterned EUV mask.

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

Systems, apparatuses, and methods are provided for manufacturing a substrate table. An example method can include forming a vacuum sheet including a plurality of vacuum connections and a plurality of recesses configured to receive a plurality of burls disposed on a core body for supporting an object such as a wafer. Optionally, at least one burl can be surrounded, partially or wholly, by a trench. The example method can further include using the vacuum sheet to mount the core body to an electrostatic sheet including a plurality of apertures configured to receive the plurality of burls. Optionally, the example method can include using the vacuum sheet to mount the core body to the electrostatic sheet such that the plurality of recesses of the vacuum sheet line up with the plurality of burls of the core body and the plurality of apertures of the electrostatic sheet.

Provided is a substrate deforming device for proximity exposure, the device comprising: a mask holder for holding an exposure mask; a first plate which is spaced apart from the exposure mask in a certain direction, and holds a to-be-exposed substrate; a position adjustment part for adjusting the position of the exposure mask; a gap adjustment part for adjusting a gap between the exposure mask and the to-be-exposed substrate; a first sensor for measuring the position of at least one among the exposure mask and the to-be-exposed substrate; a second sensor for measuring the gap between the exposure mask and the to-be-exposed substrate; and a control unit which performs a first control according to the measurement result from the first sensor, and after the first control, performs a second control according to the measurement result from the second sensor. The first control reduces the relative distance between the exposure mask and the to-be-exposed substrate by means of the position adjustment part. The second control deforms the to-be-exposed substrate by means of the gap adjustment part in response to deflection of the exposure mask.

A lithography system is provided with: a measurement device measuring position information of marks on a substrate held in a first stage; and an exposure apparatus on a second stage, the substrate for which the position information measurement for the marks has been completed, performs alignment measurement to measure position information for part of marks selected from among the marks on the substrate, and performs exposure. The measurement device measures position information of marks on the substrate to obtain higher-degree components of correction amounts of an arrangement of divided areas, and the exposure apparatus measures position information of a small number of marks on the substrate to obtain lower-degree components of the correction amounts of the arrangement of the divided areas and exposes the plurality of divided areas while controlling the position of the substrate by using the obtained lower-degree components and the higher-degree components obtained by the measurement device.

A lithography system is provided with: a measurement device measuring position information of marks on a substrate held in a first stage; and an exposure apparatus on a second stage, the substrate for which the position information measurement for the marks has been completed, performs alignment measurement to measure position information for part of marks selected from among the marks on the substrate, and performs exposure. The measurement device measures position information of marks on the substrate to obtain higher-degree components of correction amounts of an arrangement of divided areas, and the exposure apparatus measures position information of a small number of marks on the substrate to obtain lower-degree components of the correction amounts of the arrangement of the divided areas and exposes the plurality of divided areas while controlling the position of the substrate by using the obtained lower-degree components and the higher-degree components obtained by the measurement device.

A substrate shape measuring device, including: a substrate support to support a substrate having a main surface, the main surface of the substrate when supported by the substrate support substantially extending in a first plane; one or more sensor assemblies, each including a light emitter to emit light along a light axis substantially parallel to the first plane and a light sensor arranged to receive the light; and a processing device arranged to determine a shape of the substrate, wherein the substrate shape measuring device is constructed to measure with the one or more sensor assemblies in at least a first measurement direction with respect to the substrate substantially parallel to the first plane and a second measurement direction with respect to the substrate substantially parallel to the first plane.

A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.