The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support and rotate a substrate at the treating space; a liquid supply unit configured to supply a liquid to a substrate supported on the support unit; a post-treating unit configured to perform a post-treatment on the substrate supported on the support unit; and a monitoring unit configured to inspect a state of a liquid film formed of the liquid supplied onto the substrate.

Some devices and systems comprise one or more walls of a reaction chamber; an adjustable gap in the one or more walls, wherein the adjustable gap is formed between a first gap surface and a second gap surface facing the first gap surface, and wherein a distance between the first gap surface and the second gap surface is adjustable; a plurality of stops, wherein each stop of the plurality of stops is positioned on either the first gap surface or the second gap surface, wherein the plurality of stops ensure a minimum distance of the adjustable gap, wherein a total length of the plurality of stops is less than 1% of a length of the first gap surface; and one or more vacuum ports in the first gap surface or the second gap surface.

Provided is an interferometer system that irradiates an object to be measured with measuring light to thereby measure the position of the object to be measured. The interferometer system includes a laser light source; an interferometer configured to separate laser light emitted from an emission opening of the laser light source into the measuring light and reference light; and an optical path protecting member configured to surround an optical axis such that the laser light passes through the inside thereof and of which one opening is in contact with the emission opening.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A fluid handling structure configured to confine immersion fluid to a region of a lithographic apparatus, the fluid handling structure comprising an aperture formed therein for the passage therethrough of a radiation beam through the immersion fluid, the aperture defining an immersion space to be filled with the immersion fluid, and an inner part and an outer part; wherein the inner part and the outer part are arranged so as to form therebetween a variable space and a connecting space that connects the variable space to the immersion space, wherein the outer part is movable relative to the inner part in a first plane so as to change in shape the variable space but not the connecting space, and wherein the fluid handling structure is configured to contain the immersion fluid in the variable space.

A lithographic apparatus including: a projection system to project radiation onto a substrate supported on a substrate stage, during an exposure phase; a sensing system to sense a property of the substrate on the stage during a sensing phase; and a positioning system to determine a position of the stage relative to a reference system via a radiation path between the stage and the reference system, wherein the apparatus is configured to control stage movement relative to the reference system in the sensing phase and to control other movement relative to the reference system during the exposure phase; the stage or reference system having an outlet to provide a gas curtain to reduce ingress of ambient gas into the path; and the apparatus is operative such that a characteristic of the gas curtain is different in at least part of the sensing phase compared to in the exposure phase.

A carrying device and a fixing method of a carrying device are provided. The carrying device includes a body and an electromagnet fixing module disposed on the body; wherein the electromagnet fixing module is configured to fix the carrying device. The present application uses the electromagnet fixing module to fix the carrying device, which can avoid downtime of an exposure machine caused by shaking of the carrying device when a robot arm of the exposure machine picks or places the mask form the carrying device so as to improve throughput.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A method comprises loading a wafer onto a wafer chuck of a lithography apparatus, projecting an extreme ultraviolet light through an opening of a frame structure of the lithography apparatus, onto the wafer, and introducing an airflow from an air curtain module on the wafer chuck toward the frame structure, wherein the air curtain module surrounds the wafer. The airflow forms an air curtain around the wafer, and shields the wafer from contaminants from the frame structure or a wafer stage.

A molding apparatus that molds a composition on a substrate with a mold includes a mold holding unit configured to hold the mold, a substrate holding unit configured to hold the substrate, a first elastic member configured to apply a first elastic force to the mold holding unit in a direction away from the substrate holding unit, and a control unit configured to cause the mold holding unit to move in the direction away from the substrate holding unit in a case where the control unit determines that an abnormality has occurred.