Provided in the disclosure is a photomask for detecting flare degree of lens of exposure machine. The photomask includes a central exposure area and a peripheral area, exposure light of the exposure machine passing through the lens and then penetrating the central exposure area to expose photoresist on a wafer, wherein the entire central exposure area is provided with a shading layer to prevent the exposure light from penetrating; and the peripheral area is provided with a plurality of light-transmitting stripes, and stray light formed after the exposure light passes through the lens penetrates the plurality of light-transmitting stripes to expose the photoresist. Further provided in the disclosure is a method for detecting flare degree of lens of exposure machine by using the photomask. According to the disclosure, a lens flare problem of an exposure machine can be found and solved in time.

Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

A multi-channel device and method for measuring the distortion and magnification of objective lens. The multi-channel device for measuring the distortion and magnification of objective lens comprises an illumination system, a reticle stage, a test reticle, a projection objective lens, a wafer stage and a multi-channel image plane sensor, wherein the multi-channel image plane sensor simultaneously measures the image placement shifts between actual image points and nominal image points after a plurality of object plane test marks are imaged by the projection objective lens, and calculates the distortion and magnification errors of the objective lens by fitting, which shortens the measurement time, eliminates the influence of wafer stage errors on the measurement accuracy and improves the measurement accuracy.

Systems for cleaning optical surfaces of overlay inspection systems are disclosed. In particular, systems for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems are disclosed. A system for cleaning optical surfaces of overlay inspection systems includes a first illumination source, a detector, a set of illumination optics, and a set of imaging optics. In some embodiments, the system may include at least one of a second illumination source and a third illumination source, each of which may be configured to cause or aid the removal of contaminants from one or more optical surfaces of the system.

A method for maintaining a projection exposure apparatus comprising at least two modules and a reference element, wherein the modules are referenced to the reference element, comprises: removing a module; attaching a service module to or in the vicinity of the projection exposure apparatus; referencing the service module to the reference element of the projection exposure apparatus; and implementing a maintenance measure with the aid of the service module.

A substrate treating method includes measuring an alignment state of a substrate placed on a hand of a transfer unit that transfers the substrate, transferring the substrate to a substrate alignment unit by the transfer unit when the alignment state of the substrate is faulty, aligning a location of the substrate by the substrate alignment unit, and temporarily correcting the location of the substrate before the substrate is loaded on the substrate alignment unit when it is measured in the measuring of the alignment state that the alignment state of the substrate exceeds a sensor reading range.

A system (400) includes an illumination system (402), a detector (404), and a comparator (406). The illumination system includes a radiation source (408) and a spatial light modulator (410). The radiation source generates a beam of radiation (442). The spatial light modulator directs the beam toward a surface (436) of an object (428) and adjusts a spatial intensity distribution of the beam at the surface. The detector receives radiation (444) scattered at the surface and by a structure (434) near the surface. The detector generates a detection signal based on the received radiation. The comparator receives the detection signal, generates a first image based on the detection signal, and distinguishes between a spurious signal and a signal corresponding to a presence of a foreign particle on the surface based on the first image and the adjusted spatial intensity distribution.

An extreme ultraviolet (EUV) collector inspection apparatus includes a light blocking cover covering a front surface of an EUV collector to be inspected and providing a space portion in which external light is blocked, a light source in the space portion, the light source having a pillar shape extending along a central axis of the EUV collector, the light source configured to output irradiated light ranging from an ultraviolet (UV) band to a visible light (VIS) band, and a spectrometer above the light source and configured to detect a spectrum of reflected light from the irradiated light reflected from the front surface of the EUV collector. The apparatus or a controller associated therewith may be configured to inspect a contamination state of the front surface of the EUV collector based on the spectrum of reflected light.

A hydrophobic membrane structure includes: a color-changing layer, and a hydrophobic layer covering the surface of the color-changing layer. The color of an area of the color-changing layer in contact with the liquid changes to form a color-changing area, when the color-changing layer comes into contact with liquid.

A method of pattern alignment is provided. The method includes identifying a reference pattern positioned below a working surface of a wafer. The wafer is exposed to a first pattern of actinic radiation. The first pattern is a first component of a composite pattern. The first pattern of actinic radiation is aligned using the reference pattern. The wafer is exposed to a second pattern of actinic radiation. The second pattern is a second component of the composite pattern and exposed adjacent to the first pattern. The second pattern of actinic radiation is aligned with the first pattern of actinic radiation using the reference pattern.