A method localizes assembly errors during the arrangement and/or the assembly of in particular vibration-isolated structural elements, in particular of components of optical arrangements, preferably of microlithographic projection exposure apparatuses.

An apparatus for containing a substrate and a method of manufacturing the apparatus are provided. The apparatus for containing a substrate includes: a base having a periphery and an upward-facing top horizontal planar surface with a plurality of contact elements, the contact elements being used for engaging the substrate to hold the substrate upon the upward-facing top horizontal planar surface, an upward-facing frame-like support surface extending from the upward-facing top horizontal planar surface and surrounding the contact elements at a position proximate to the periphery of the base; and a cover having a downward-facing frame-like support surface being in large-area contact with the upward-facing frame-like support surface to define a cavity for containing the substrate between the base and the cover. The downward-facing and upward-facing frame-like support surfaces in contact with each other are not at the same level as the upward-facing top horizontal planar surface.

A system for measuring the difference between a property of a first target and a property of a second target, the system comprising a first member and a second member, wherein the first member comprises a first pattern, and the speed of rotation of the first member is configured to be based on the property of the first target; and the second member comprises a second pattern wherein, the speed of rotation of the second member is configured to be based on the property of the second target, further wherein the first and second pattern are angularly-varying and are configured to generate an interference pattern by their interaction when the first and second members have a relative difference in their rotational speeds, the interference pattern being indicative of the magnitude of this difference.

An interface plate for mounting an apparatus or an assembly of an apparatus to a floor or floor plate is described, the interface plate comprising: an install block having an install surface configured to receive an interface surface of the apparatus or assembly; an adjustment mechanism configured to adjust a position or orientation of the install block relative to the floor or floor plate; and a mounting mechanism configured to rigidly mount the install block to the floor or floor plate.

Embodiments of the present disclosure disclose a lithography method, a lithography apparatus, and a computer storage medium. The method includes: determining an exposure intensity of a mask aligner; determining a target preset interval corresponding to the mask aligner according to the exposure intensity; determining, according to the target preset interval, at least one target wafer for which at least one exposure dose is a target exposure dose, the target preset interval has a corresponding relationship with the target exposure dose; and performing lithography process on the at least one target wafer by using the mask aligner.

A method of patterning an underlying layer that includes: depositing a metal-free polymer film over the underlying layer, exposing the film to an EUV to form an exposed region and a masked region of the film, the exposed region photoreacting to the EUV; selectively dry etching first portions of the film to form features including the remaining second portions of the film, an etch rate of the first portions being greater than that of the second portions of the film, the first portions being one of the exposed region and the masked region, the second portions being another of the exposed region and the masked region that is not the first portion, where a pitch of the features is below the feature size achievable with a 193 nm immersion lithography tool in a single patterning process; and patterning the underlying layer using the second portion as an etch mask.

A sensor degradation evaluation method according to an aspect of the present disclosure includes an evaluation step of evaluating degradation of at least one of a sensor for coarse measurement that receives interference fringes produced by a spectrometer for coarse measurement and a sensor for fine measurement that receives interference fringes produced by a spectrometer for fine measurement, and the evaluation step includes causing a plurality of kinds of laser light having wavelengths different from one another to be sequentially incident on the spectrometer for coarse measurement and the spectrometer for fine measurement and acquiring a coarse-measurement wavelength and a fine-measurement wavelength on a wavelength basis from a plurality of the received interference fringes, acquiring a degradation parameter on a wavelength basis from the coarse-measurement wavelength and the fine-measurement wavelength on a wavelength basis, and comparing the degradation parameter on a wavelength basis with a threshold.

An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.

An apparatus for removing a residue of an EUV light source vessel including an internal side surface having a curved surface is provided. The apparatus includes a frame portion configured to be disposed on a bottom surface of an EUV light source vessel and a head portion above the frame portion. The head portion is configured to be rotatably moved on a circular trajectory while maintaining a desired (and/or alternatively predetermined) distance from the curved surface of the EUV light source vessel. The head portion may have a heating member configured to emit heat toward the curved surface of the EUV light source vessel. The heating member may have a shape curved in an arc corresponding to a portion of the circular trajectory.

An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.