A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.

A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

A system for a semiconductor fabrication facility includes a maintenance tool, a control unit, a first track, a second track, a maintenance crane movably mounted on the first track, a plurality of first sensors disposed on the first track, an OHT vehicle movably mounted on the second track, and a second sensor on the OHT vehicle. The first sensors detect a location of the maintenance crane and generate a first location data to the control unit. The second sensor generates a second location data to the control unit.

A method includes: a) measuring individual parts K1-KN of an optical system to provide measurement data, N being greater than one; b) using the measurement data to virtualize the individual parts K1-KN and using the virtualized individual parts K1-KN to generate an actual assembly model by geometrically stringing together a plurality of the virtualized individual parts K1-KN, the actual assembly model comprising virtual actual positions of the virtualized individual parts K1-KN in a virtually assembled state; c) using the actual assembly model and a target assembly model to determine a correction measure, the target assembly model comprising virtual target positions of one or more of the virtualized individual parts K1-KN in the virtually assembled state; and d) using the correction measure, assembling the individual parts K1-KN to form the optical system.

An arrangement for use in a microlithographic optical imaging device includes an optical unit and a supporting structure for supporting the optical unit. The optical unit includes an optical element, a carrier structure for carrying the optical element, and an active actuating device. The optical element is supported on the carrier structure via of the active actuating device. The active actuating device is configured to adjust the optical element during normal operation of the optical imaging device in a maximum movement range, which is predefined by the normal operation of the optical imaging device, with respect to a first reference assigned to the imaging device. The active actuating device is configured so that the maximum movement range is completely covered by actuating movements of the active actuating device with an actuating accuracy predefined by the normal operation of the optical imaging device.

A movable body apparatus has: a substrate holder holding a substrate and can move in the X and Y-axes directions; a Y coarse movement stage movable in the Y-axis direction; a first measurement system acquiring position information on the substrate holder by heads on the substrate holder and a scale on the Y coarse movement stage; a second measurement system acquiring position information on the Y coarse movement stage by heads on the Y coarse movement stage and a scale; and a control system controlling the position of the substrate holder based on position information acquired by the first and second measurement systems. The first measurement system irradiates a measurement beam while moving the heads in the X-axis direction with respect to the scale, and the second measurement system irradiates a measurement beam while moving the heads in the Y-axis direction with respect to the scale.

A system for a semiconductor fabrication facility includes a manufacturing tool including a load port, a maintenance crane, a rectangular zone overlapping with the load port of the manufacturing tool, a plurality of first sensors at corners of the rectangular zone, an OHT vehicle, a second sensor on the OHT vehicle, a third sensor on the load port, and a control unit. The first sensors are configured to detect a location of the maintenance crane and to generate a first location data. The second sensor is configured to generate a second location data. The control unit is configured to receive the first location data of the maintenance crane and the second location data of the OHT vehicle. The control unit further sends signals to the second sensor and the third sensor or to cut off the signal to the second sensor.

A management method of managing a processing apparatus that performs processing of a member, includes setting, in a case where adjustment of the processing apparatus is performed, an offset value to control the processing apparatus such that variance between results of processing by the processing apparatus before and after the adjustment is reduced.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system isolates a source of droplets from oxidants to prevent the oxidation of the nozzle or the formation of metal oxides on the nozzle, both of which can adversely affect an ability of the nozzle to generate a sufficient amount of droplets and/or direct the droplets in a desired direction.

An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.