A method of assembling a facet mirror of an optical system, in which facets of the facet mirror are imaged onto a field plane of the optical system, includes: a) determining positions of the facets of the facet mirror relative to interfaces of the facet mirror, with the aid of which the facet mirror is able to be connected to a support structure; b) calculating an actual position of an object field of the optical system arising for the facet mirror in the field plane; and c) arranging spacers between the interfaces and the support structure so that the object field in the field plane is brought from the calculated actual position to a target position.

An apparatus for containing a substrate and a method of manufacturing the apparatus are provided. The apparatus for containing a substrate includes: a base having a periphery and an upward-facing top horizontal planar surface with a plurality of contact elements, the contact elements being used for engaging the substrate to hold the substrate upon the upward-facing top horizontal planar surface, an upward-facing frame-like support surface extending from the upward-facing top horizontal planar surface and surrounding the contact elements at a position proximate to the periphery of the base; and a cover having a downward-facing frame-like support surface being in large-area contact with the upward-facing frame-like support surface to define a cavity for containing the substrate between the base and the cover. The downward-facing and upward-facing frame-like support surfaces in contact with each other are not at the same level as the upward-facing top horizontal planar surface.

An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.

A method for restoring an illumination system installed in an EUV apparatus is provided.

An extreme ultraviolet light generation apparatus includes: an optical base; and a chamber module replaceable from the optical base. The chamber module includes a chamber in which extreme ultraviolet light is generated, a condenser mirror disposed inside the chamber and configured to condense extreme ultraviolet light generated inside the chamber, a window configured to transmit, into the chamber, a laser beam introduced into the optical base, and having a function to seal up the chamber, and a laser beam condensation optical system configured to condense the laser beam having transmitted through the window.

A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

An extreme ultraviolet light generation device according to an aspect of the present disclosure includes: a chamber; a mirror configured to condense extreme ultraviolet light radiated from plasma generated by irradiating a target supplied into the chamber with a laser beam; an electromagnet disposed outside the chamber to form a magnetic field between a generation region of the plasma in the chamber and the mirror; a current inversion device configured to invert the direction of current flowing through the electromagnet; and a controller configured to control the current inversion device to invert the direction of the current when a set condition is satisfied.

An apparatus for removing residues from a source vessel in an extreme ultraviolet lithography device, the apparatus including a frame portion, and a heater structure on the frame portion, the heater structure having a head on the frame portion, the head being rotatable in at least one shaft direction, and a heater on the head to dissipate heat toward residues in the source vessel, the heater to apply temperature of 200° C. to 800° C.

A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.