A pellicle removal tool including a stage that holds a photomask and an associated pellicle, two or more arms positioned around the stage and configured to engage pellicle side wells of the pellicle, and two or more actuators each configured to adjust at least a vertical position of a corresponding one of the two or more arms so as to apply a lifting force to the pellicle for removal of the pellicle from the photomask.

In situ dynamic protection of an optical element surface against degradation includes disposing the optical element in an interior of an optical assembly for the FUV/VUV wavelength range and supplying at least one volatile fluorine-containing compound (A, B) to the interior for dynamic deposition of a fluorine-containing protective layer on the surface. The protective layer (7) is deposited on the surface layer by layer via a molecular layer deposition process. The compound includes a fluorine-containing reactant (A) supplied to the interior in a pulsed manner. A further reactant (B) is supplied to the interior also in a pulsed manner. An associated optical assembly includes an interior in which a surface is disposed, and at least one metering apparatus (123) that supplies a reactant to the interior. The metering apparatus provides a pulsed supply of the compound as a reactant (A, B) for layer by layer molecular layer deposition.

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods of using these pellicles.

An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.

A method of manufacturing a membrane assembly for EUV lithography, wherein a layer which forms at least part of a pellicle membrane is provided after one or more etching steps which define a pellicle border holding the pellicle membrane. Also provided is a pellicle substrate, the substrate including: a stack having a front face and back face, wherein one or more layers on the back face of the stack have been selectively removed to define a pellicle border region for holding the pellicle membrane before the layer which forms at least part of a pellicle membrane has been provided.

A lithographic method includes the step of providing a photomask with a pattern, the step of using a transparent pod to contain the photomask, the step of inserting the transparent pod in a lithographic machine, the step of using the lithograph machine to cast light onto the photomask via the transparent pod, and the step of transferring the pattern to a wafer.

A detection method for a pellicle membrane of a photomask includes applying a predetermined pressure under which the pellicle membrane undergoes a deformation, measuring and calculating at least one of deformation level, Young's modulus, and flexural rigidity level of the pellicle membrane by detection, and obtaining a detection result about the pellicle membrane according to at least one of the deformation level, Young's modulus, and flexural rigidity level of the pellicle membrane, so as to evaluate the quality of the pellicle membrane.

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.