An object handling apparatus for handling a generally planar object, the object handling apparatus including: two support arms, at least one of the two support arms movable relative to another support arm generally in a plane such that the two support arms are operable to grip and hold an object disposed in the plane, wherein each of the support arms includes at least one support pad and at least one aligner, the support pads configured to locally contact a surface of the object and apply a force thereto generally perpendicular to the plane so as to support the object and the at least one aligner configured to locally contact a surface of the object and apply a force thereto generally in the plane so as to grip the object.

A manufacturing method includes the steps of: (a) preparing a lower layer member having a first base layer, a first protective thin film, and a first CNT thin film; (b) preparing a first upper layer member having a second base layer, a second protective thin film, and a second CNT thin film or a second upper layer member having a second base layer and a second protective thin film; (c) arranging the lower layer member above the first CNT thin film; (d) forming a group member by arranging the second CNT thin film of the first upper layer member or the second protective film of the second upper layer member to be stacked on the first CNT thin film; and € removing the second base layer from the group member.

A reflective optical element (17), in particular for reflecting EUV radiation (16), includes: a substrate (25), and a reflective coating (26) applied to the substrate (25). In one disclosed aspect, the substrate (25) is doped within its volume (V) with at least one precious metal (27). In a further disclosed aspect, the reflective coating (26) and/or a structured layer (28) that is formed between the substrate (25) and the reflective coating (26) is doped with at least one precious metal (27). Also disclosed are an optical arrangement, preferably a projection exposure apparatus for microlithography, in particular for EUV lithography, which includes at least one such reflective optical element (17), and a method of producing such a reflective optical element (17).

This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrB.sub.x (2<x<16).

A lithography system includes an exposure device and a reticle structure disposed in the exposure device. The exposure device includes a reticle having patterned features, a membrane having a boarder section, and a frame disposed and forming an enclosure between the reticle and the membrane to encircle the patterned features. The frame includes a plurality of holes including at least one slit-shaped hole having one side formed by the reticle and three sides formed by the frame.

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.