Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.

The present disclosure provides an air control cabinet (ACC) module for a clean room system. The clean room system has a clean fab and a clean sub-fab. The clean fab of the clean room system is configured to be disposed with at least one wafer processing apparatus. The ACC module includes an ACC inlet tube, a main cabinet, and an ACC pipeline. The ACC inlet tube is configured to supply air from the clean fab of the clean room system to the ACC module. The main cabinet is connected to the ACC inlet tube and configured to generate clean air from the air supplied from the ACC inlet tube. The ACC pipeline is connected to the main cabinet and configured to supply the clean air generated by the main cabinet to the wafer processing apparatus in the clean fab of the clean room system.

A lithographic apparatus includes a substrate table, a post-exposure handling module, a substrate handling robot and a drying station. The substrate table is configured to support a substrate for an exposure process. The post-exposure handling module is configured to handle the substrate post-exposure. The substrate handling robot is configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure handling module. The drying station is configured to actively remove liquid from a surface of the substrate. The drying station is located in the substrate unloading path. The drying station is located in the post-exposure handling module. The post-exposure handling module may be a substrate handler.

An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm.sup.2 and equal to or lower than a fluence of the main pulse laser beam.

Disclosed is a substrate treating method for treating a substrate with a directed self-assembly material applied thereto. The substrate treating method includes a heating step and a cooling step. The heating step includes heating the substrate to perform phase separation of the directed self-assembly material by maintaining an interior of a treatment container in a non-oxidizing gas atmosphere and placing the substrate at a heating position. The cooling step includes cooling the substrate by maintaining the interior of the treatment container in the non-oxidizing gas atmosphere, placing the substrate at a cooling position further away from the heating unit than the heating position, supplying non-oxidizing gas into the treatment container, and exhausting gas within the treatment container.

A system for a semiconductor fabrication facility includes a maintenance tool, a control unit, a first track, a second track, a maintenance crane movably mounted on the first track, a plurality of first sensors disposed on the first track, an OHT vehicle movably mounted on the second track, and a second sensor on the OHT vehicle. The first sensors detect a location of the maintenance crane and generate a first location data to the control unit. The second sensor generates a second location data to the control unit.

System and method for removing molecular contaminants from an air stream are disclosed. The system includes first, second and third filter. The first filter removes organic contaminants from an air stream passing through the first filter. The second filter is downstream of the first filter, is physically and chemically exchangeable with the first filter and removes organic contaminants from the air stream output of the first filter. The third filter, downstream of the second filter, is not exchangeable with the first filter or the second filter. The first position filter can be replaced by the second filter in the second position when the first filter in the first position becomes depleted as detected. A new filter in the second filter position is inserted. Replacing the depleted first filter with the second downstream filter reduces costs and waste while inserting the new filter in the second position ensures removing organic contaminants.

A metrology system can be integrated within a lithographic apparatus to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, the throughput information including a throughput parameter, and predict, using a throughput simulator, a throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.

An object of the present invention is to provide a chemical liquid which has excellent defect inhibition performance and hardly breaks a transfer pipe line that a device for manufacturing the chemical liquid includes at the time of manufacturing the chemical liquid. Another object of the present invention is to provide a chemical liquid storage body, a manufacturing method of a chemical liquid, and a manufacturing method of a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent and an ion of at least one kind of atom selected from the group consisting of an Fe atom, a Cr atom, a Ni atom, and a Pb atom, in which in a case where the chemical liquid contains one kind of the ion, a content of the metal ion is 0.1 to 100 mass ppt, in a case where the chemical liquid contains two or more kinds of the ions, a content of each of the metal ions is 0.1 to 100 mass ppt, and a charge potential is equal to or lower than 100 mV.