Various embodiments of aligning wafers are described herein. In one embodiment, a photolithography system aligns a wafer by averaging individual via locations. In particular, some embodiments of the present technology determine the center locations of individual vias on a wafer and average them together to obtain an average center location of the set of vias. Based on a comparison of the average center location to a desired center location, the present technology adjusts the wafer position. Additionally, in some embodiments, the present technology compares wafer via patterns to a template and adjusts the position of the wafer based on the comparison.

In some embodiments, the present application is directed to a method and system for process control of a lithography tool. The method transfers a reference pattern to exposure fields of a reference workpiece to form pairs of overlapping reference layers. Misalignment between the overlapping reference layers is measured to form first and second baseline maps, and a baseline map is formed from the first and second baseline maps. A production pattern is transferred to exposure fields of a production workpiece to form second production layers arranged over and aligned to first production layers. Misalignment between the first and second production layers is measured to form a production map. The baseline map is transformed and subsequently added to the production map, to form a final production map. Parameters of a process tool are updated based on the final production map.

An optical system for producing lithographic structures is disclosed. Also disclosed is a method for determining relative coordinates of a position of a writing field relative to a position of a preview field in such an optical system, and a method for producing lithographic structures using such an optical system.

A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

The exposure apparatus includes a first detector, a first alignment unit, a second detector, and a second alignment unit, and a controller, wherein the controller controls the second alignment unit so that alignment of a substrate is conducted based on a detection result from detection of the mark by the second detector in a first view when alignment of the substrate can be conducted by the first alignment unit at a prescribed alignment accuracy, and controls the second alignment unit so that alignment of the substrate is conducted based on a detection result from detection of the mark by the second detector in a second view that is wider than the first view when alignment of the substrate cannot be conducted by the first alignment unit at the prescribed alignment accuracy.

In some embodiments, the present application is directed to a method and system for process control of a lithography tool. The method transfers a reference pattern to exposure fields of a reference workpiece to form pairs of overlapping reference layers. Misalignment between the overlapping reference layers is measured to form first and second baseline maps, and a baseline map is formed from the first and second baseline maps. A production pattern is transferred to exposure fields of a production workpiece to form second production layers arranged over and aligned to first production layers. Misalignment between the first and second production layers is measured to form a production map. The baseline map is transformed and subsequently added to the production map, to form a final production map. Parameters of a process tool are updated based on the final production map.

Aspects of the present disclosure may include a method and/or a system for spatially aligning microfabrication processes and laser writing processes on a wafer by preparing a pattern of alignment features across a wafer with known relative locations and orientations between elements of the pattern, aligning one or more laser writing processes to the alignment patterns, laser writing features into the wafer based on the prior process alignment, aligning one or more microfabrication processes to the microfabrication alignment patterns, and processing the wafer via the microfabrication steps using the results of the prior alignment step.