A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

A substrate processing apparatus is provided. The apparatus includes an imaging unit that images a mark on a substrate, and a processor that aligns the substrate based on an image of the mark obtained by the imaging unit. If the alignment has failed, the processor identifies a factor of the failure based on information including the image and executes at least one of a plurality of recovery processes based on the identified factor. The processor includes an output unit that outputs a condition for the at least one of recovery processes in accordance with an inference model, and a learning unit that learns the inference model based on an execution result of the at least one of the recovery processes under the condition output from the output unit.

A position detection apparatus configured to detect a pattern including a plurality of pattern elements formed on an object includes a control unit configured to detect the pattern by performing pattern matching between a template including a plurality of feature points and the plurality of pattern elements. While, performing pattern matching, the control unit changes positions of the plurality of feature points such that a correlation between an image and the template is within a predetermined allowable range.

The present invention relates to a lithographic apparatus, comprising: a projection system configured to project a patterned radiation beam onto a substrate, comprising optical elements, a sensor frame, a first position measurement system configured to measure a position of an optical element relative to the sensor frame, comprising a sensor adapted to monitor an optical element, with a sensor element mounted to the sensor frame, a sensor frame support supporting the sensor frame on a reference, a force measurement device adapted to generate force measurement data relating to force exerted on the sensor frame by the sensor frame support, a position control device adapted to control the relative position of the substrate and the patterned radiation beam wherein the position control device is configured to receive the force measurement data and to control said relative position based on at least the force measurement data.

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Disclosed is a metrology system comprising: a pre-alignment metrology tool operable to measure a plurality of targets on a substrate to obtain measurement data; and a processing unit. The processing unit is operable to: process said measurement data to determine for each target at least one position distribution which describes variation of said position value over at least part of said target; and determine a measurement correction from said at least one position distribution which corrects for within-target variation in each of said targets, said measurement correction for correcting measurements performed by an alignment sensor.

A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

An imprint apparatus brings an imprint material on a substrate including a first mark into contact with a mold including a second mark and cures the imprint material, thereby forming a cured product of the imprint material on the substrate. The apparatus includes a plurality of detectors used for alignment detection, and a controller configured to obtain a plurality of pieces of relative position information by detecting a relative position between the first mark and the second mark a plurality of times using the plurality of detectors in a state in which the imprint material is cured and a positional relationship between the substrate and the mold is maintained, and to calibrate, based on the plurality of pieces of relative position information, a plurality of detection processing operations each performed using each of the plurality of detectors.