G03F9/7019

EXPOSURE APPARATUS AND METHOD OF MANUFACTURING ARTICLE
20200371443 · 2020-11-26 ·

The present invention provides an exposure apparatus that performs an exposure process to transfer a pattern of a mask to a substrate, including a projection optical system configured to project the pattern of the mask onto the substrate, a measurement pattern arranged on an object plane of the projection optical system and including a plurality of pattern elements having different positions in an optical axis direction of the projection optical system, a first detection unit configured to detect light from the measurement pattern via the projection optical system, and a control unit configured to control a relative position between the mask and the substrate in the optical axis direction when the exposure process is performed.

Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method

A method of controlling a lithographic apparatus to manufacture a plurality of devices, the method including: obtaining a parameter map representing a parameter variation across a substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.

SUBSTRATE PROCESSING APPARATUS, ARTICLE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, MANAGEMENT APPARATUS, AND STORAGE MEDIUM
20200333718 · 2020-10-22 ·

A substrate processing apparatus is provided. The apparatus includes an imaging unit that images a mark on a substrate, and a processor that aligns the substrate based on an image of the mark obtained by the imaging unit. If the alignment has failed, the processor identifies a factor of the failure based on information including the image and executes at least one of a plurality of recovery processes based on the identified factor. The processor includes an output unit that outputs a condition for the at least one of recovery processes in accordance with an inference model, and a learning unit that learns the inference model based on an execution result of the at least one of the recovery processes under the condition output from the output unit.

Lithographic Cluster, Lithographic Apparatus, and Device Manufacturing Method

A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

LITHOGRAPHY SYSTEM AND METHOD

A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

LITHOGRAPHIC METHOD

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method and apparatus

A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

PHOTOETCHING APPARATUS AND METHOD
20200257207 · 2020-08-13 ·

A lithography apparatus and method is provided. The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.

Systems and methods for detection of and compensation for malfunctioning droplet dispensing nozzles

An apparatus and method for a dispenser with nozzles configured to eject lines of droplets of formable material onto a substrate in response to ejection signals. The fluid dispenser dispenses a first line of ejected droplets of formable material onto a first location on the substrate. A line camera generates camera signals that are representative of the first line of ejected droplets. The camera signals are analyzed to identify malfunctioning nozzles. The fluid dispenser dispenses a second line of ejected droplets of formable material onto a second location on the substrate that compensates for the one or more malfunctioning nozzles.

SELF-REFERENCING AND SELF-CALIBRATING INTERFERENCE PATTERN OVERLAY MEASUREMENT

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.