Patent classifications
G03F9/7023
Measurement device, lithography system and exposure apparatus, and device manufacturing method
A measurement device is equipped with a surface plate, a slider which holds a substrate and which is movable relative to the surface plate, a drive system that moves the slider, a first position measurement system which measures the slider's first position information relative to the surface plate, a measurement unit having a mark detection system that detects a mark on a substrate, a second position measurement system which measures a relative second position information between the mark detection system and substrate, and a controller which obtains the first position information from the first position measurement system and second position information from the second position measurement system while controlling the slider's movement by the drive system, and obtains position information of a plurality of marks based on detection signals of the mark detection system having detected marks on the substrate, the first position information, and the second position information.
APPARATUS AND METHOD FOR MEASURING SUBSTRATE HEIGHT
An apparatus for measuring a height of a substrate for processing in a lithographic apparatus is disclosed. The apparatus comprises a first sensor for sensing a height of the substrate over a first area. The apparatus also comprises a second sensor for sensing a height of the substrate over a second area. The apparatus further comprises a processor adapted to normalize first data corresponding to a signal from the first sensor with a second sensor footprint to produce a first normalized height data, and to normalize second data corresponding to a signal from the second sensor with a first sensor footprint to produce a second normalized height data. The processor is adapted to determine a correction to a measured height of the substrate based on a difference between the first and second normalized height data.
SURFACE POSITION DETECTION DEVICE, EXPOSURE APPARATUS, SUBSTRATE-PROCESSING SYSTEM, AND DEVICE-MANUFACTURING METHOD
A surface position detection device that information of a detected surface along an axis that intersects the detected surface includes: a light transmission unit having a modulated intensity in the detected surface in a first direction within the detected surface are radiated and superimposed onto the detected surface obliquely from a direction having a direction component in the first direction and forms an irradiation region on the detected surface; a light reception unit arranged with respect to the detected surface, receives at a different position of each light reception surface, the plurality of detection lights reflected by a detection region of which a width in the first direction is a predetermined value in the irradiation region, and outputs photoelectric conversion signal of the plurality of detection lights; and calculates the detected surface based on the photoelectric conversion signal of the plurality of detection lights output from the light reception unit.
SYSTEM AND METHOD FOR OPTIMIZING A LITHOGRAPHY EXPOSURE PROCESS
A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.
Method of determining a height profile, a measurement system and a computer readable medium
Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.
System and method for optimizing a lithography exposure process
A method for correcting misalignments is provided. An alignment for each device of a group of devices mounted on a substrate is determined. An alignment error for the group of devices mounted on the substrate is determined based on the respective alignment for each device. One or more correction factors are calculated based on the alignment error. The alignment error is corrected based on the one or more correction factors.
Photoetching apparatus and method
The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.
POSITION MEASUREMENT APPARATUS, OVERLAY INSPECTION APPARATUS, POSITION MEASUREMENT METHOD, IMPRINT APPARATUS, AND ARTICLE MANUFACTURING METHOD
Provided is a position measurement apparatus in which a measurement error in a target is reduced.
A position measurement apparatus measuring a position of a target includes an illumination unit configured to illuminate the target with illumination light including light of a first wavelength and light of a second wavelength different from the first wavelength, a measurement unit configured to measure the position of the target by detecting light from the target illuminated with the illumination light, and a control unit configured to adjust a ratio of a light intensity of the first wavelength to a light intensity of the second wavelength such that a measurement error varying depending on the position of the target in the measurement unit is reduced.
Method in which alignment control of a member and a substrate is effected with respect to an in-plane direction of the substrate and an uncured material in a state of bringing a member and the uncured material on a substrate into contact
A method in which alignment control of a member and a substrate is effected with respect to an in-plane direction of the substrate and an uncured material in a state of bringing a member and the uncured material on a substrate into contact with each other is cured. The method includes a step of bringing the member and the substrate near to each other while effecting the alignment control, based on a driving profile, after the alignment control is started, to bring the member and the uncured material into contact with each other, and then the uncured material is cured, and a step of increasing a gap between the member and the substrate, after the uncured material is cured, wherein the driving profile for the alignment control after the alignment control is started and at least one of before and after the member contacts the uncured material is changed.
Lithographic method
- Patricius Aloysius Jacobus Tinnemans ,
- Edo Maria HULSEBOS ,
- Henricus Johannes Lambertus MEGENS ,
- Ahmet Koray Erdamar ,
- Loek Johannes Petrus Verhees ,
- Willem Seine Christian Roelofs ,
- Wendy Johanna Martina VAN DE VEN ,
- Hadi YAGUBIZADE ,
- Hakki Ergün CEKLI ,
- Ralph BRINKHOF ,
- Tran Thanh Thuy Vu ,
- Maikel Robert GOOSEN ,
- Maaike Van T Westeinde ,
- Weitian Kou ,
- Manouk RIJPSTRA ,
- Matthijs COX ,
- Franciscus Godefridus Casper BIJNEN
A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.