A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.

The present invention provides an imprint apparatus that performs imprint processing of forming a pattern of an imprint material on a substrate using a mold, the apparatus including an image sensing unit configured to sense at least one of the mold and the substrate and obtain an image, and a determination unit configured to determine normality/abnormality of the imprint processing, wherein the imprint processing includes a first step of supplying the imprint material onto the substrate, and a second step of bringing the mold and the imprint material on the substrate into contact with each other, and the determination unit changes a reference of determination of the normality/abnormality of the imprint processing for each step of the imprint processing and determines the normality/abnormality of the imprint processing based on the image sensed by the image sensing unit.

A position detector includes a detection unit configured to detect light from a first diffraction grating including a first pattern disposed in a first direction, and light from a second diffraction grating including a second pattern disposed in the first direction, and a control unit configured to obtain a relative position between the first and the second diffraction gratings based on the light detected by the detection unit. The position detector has a third pattern formed in a second direction different from the first direction at edges of the first pattern of the first diffraction grating, the third pattern has a width smaller than a width of the first pattern of the first diffraction grating.

A dual-layer alignment apparatus is disclosed which includes: a fixed frame (40) and, disposed thereon, a first measuring device (50) and a mark plate (41), the mark plate (41) having a fixed-frame mark (20); and a motion stage (60) and, disposed thereon, a reference mark (30), a motion-stage mark (70) and a second measuring device (10). The first measuring device (50) is configured to measure a relative positional relationship between the reference mark (30) and the motion-stage mark (70), the second measuring device (10) is configured to measure a relative positional relationship between the reference mark (30) and the fixed-frame mark (20), from which a final relative positional relationship between the motion-stage mark (70) and the fixed-frame mark (20) is derived, based on which the motion stage (60) is displaced to a target location. A corresponding dual-layer alignment method is also disclosed. In the apparatus, the motion stage (60) is the only movable component. Additionally, coordinate relationships can be calibrated in a static manner in order to immunize calibration accuracy from positioning accuracy of the motion stage (60), such that the alignment accuracy is improved. Further, a dual- or multi-lens design can be employed to allow additional improvements in flexibility and alignment efficiency.

A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.

An information processing apparatus for acquiring an inspection condition for performing an inspection on a pattern formed by a lithography apparatus that forms a pattern on a substrate with an original includes an acquisition unit configured to acquire a second inspection condition to be applied in a case where an inspection is performed on a second pattern by inputting third information indicating a state of the lithography apparatus acquired when the second pattern is formed to a model, wherein the model is acquired by machine learning with learning data including first information indicating a state of the lithography apparatus acquired when a first pattern is formed and second information indicating a first inspection condition applied when an inspection is performed on the first pattern.

The present invention provides an imprint apparatus which forms a pattern of an imprint material onto a substrate by using a mold, the apparatus including a control unit configured to provide a user interface for displaying a first map indicating a supply position of the imprint material to be supplied onto the substrate, an adjustment window for adjusting a value of an apparatus parameter which is set in the imprint apparatus and used to change a supply position of the imprint material, and a second map indicating a supply position of the imprint material after adjustment of the value of the apparatus parameter.

An overlay alignment detection apparatus for a display device and an exposure process system are provided, the overlay alignment detection apparatus including a bearing frame for bearing the display device, a control circuit, a detection assembly and an analysis circuit. The control circuit is to send control commands to the detection assembly depending on pre-stored coordinate information of a reference point within an overlay area of the display device in response to the bearing frame being at an idle time among processes; the detection assembly is to be moved to the overlay area on the bearing frame according to the control commands sent by the control circuit, to acquire images of the overlay area, and to send the acquired images to the analysis circuit; and the analysis circuit is to analyze and process an overlay alignment condition of the display device, with the images sent by the detection assembly.

The present invention provides a position detection apparatus including a detection unit configured to detect moire caused by overlap between a first diffraction grating including patterns arrayed in a first direction and a second diffraction grating including patterns arrayed in the first direction, and a processing unit configured to obtain a relative position of the first diffraction grating and the second diffraction grating based on the moire, wherein a width of an end pattern of patterns included in at least one of the first diffraction grating and the second diffraction grating in the first direction is smaller than widths of remaining patterns of the at least one diffraction grating in the first direction.

The present invention provides a position detection apparatus including a detection unit configured to detect moire caused by overlap between a first diffraction grating including patterns arrayed in a first direction and a second diffraction grating including patterns arrayed in the first direction, and a processing unit configured to obtain a relative position of the first diffraction grating and the second diffraction grating based on the moire, wherein a width of an end pattern of patterns included in at least one of the first diffraction grating and the second diffraction grating in the first direction is smaller than widths of remaining patterns of the at least one diffraction grating in the first direction.