A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

Provided is a method of determining, out of a plurality of shot regions of a substrate, a set of sample shot regions in each of which a position of a mark is to be actually measured. The method includes setting an initial arrangement of the set of sample shot regions, and adding, to the set of sample shot regions, a shot region, among the shot regions other than the sample shot regions in the initial arrangement, in which a value indicating uncertainty of an estimate of a measurement value of a position of a mark obtained using an estimation model exceeds a predetermined threshold value.

A method for selecting an optimal set of locations for a measurement or feature on a substrate, the method includes: defining a first candidate solution of locations, defining a second candidate solution with locations based on modification of a coordinate in a solution domain of the first candidate solution, and selecting the first and/or second candidate solution as the optimal solution according to a constraint associated with the substrate.

According to one embodiment, a measuring device includes a support body, a first light source, a second light source, a first sensor, and a second sensor. The support body is configured to support an end portion of a measurement target. The first light source is disposed on a front surface side of the support body. The second light source is disposed on a rear surface side of the support body. An optical axis of the second light source coincides with an optical axis of the first light source. The first sensor is configured to acquire an image of a mark in the measurement target in accordance with light from the first light source. The second sensor is configured to acquire an image of the mark in the measurement target in accordance with light from the second light source.

A method of processing a wafer is provided. The method includes providing a reference plate below the wafer. The reference plate includes a reference pattern. The reference plate is imaged to capture an image of the reference pattern by directing light through the wafer. A first pattern is aligned using the image of the reference pattern. The first pattern is applied to a working surface of the wafer based on the aligning.

Aspects of the present disclosure provide a method of aligning a wafer pattern. For example, the method can include providing a wafer having a reference pattern located below a front side of the wafer, and directing a light beam to the wafer. The method can further include identifying at least one of power and a wavelength of the light beam such that the light beam is capable of passing through the wafer and reaching the reference pattern, or identifying at least one of power and a wavelength of the light beam based on at least one of a material of the wafer and a depth of the reference pattern below the front side of the wafer. The method can further include using the light beam to image the reference pattern.

Aspects of the present disclosure provide an inspection system, which can include an image module and processing circuitry. The imaging module can image a wafer with a first light beam and a second light beam. The first light beam can be coaxially aligned with the second light beam, and image a first pattern located on a front side of a wafer to form a first image. The second light beam can image a second pattern located below the first pattern to form a second image via quantum tunneling imaging or infrared transmission imaging. The second light beam can have power sufficient to pass through at least a portion of a thickness of the wafer and reach the second pattern. The processing circuitry can perform image analysis on the first image and the second image to calculate an overlay value of the first and second patterns and/or defects of the wafer.

Aspects of the present disclosure provide an imaging system. For example, in the imaging system a first light source can generate a first light beam of a first wavelength, a second light source can generate a second light beam of a second wavelength, the second light beam having power sufficient to pass through at least a portion of a thickness of a wafer, an alignment module can coaxially align the second light beam with the first light beam, a coaxial module can focus the coaxially aligned first and second light beams onto a first pattern located on a front side of the wafer and a second pattern located below the first pattern, respectively, and an image capturing module can capture a first image of the first pattern and a second image of the second pattern. The second image can be captured via quantum tunneling imaging or infrared (IR) transmission imaging.

A method of pattern alignment is provided. The method includes identifying a reference pattern positioned below a working surface of a wafer. The wafer is exposed to a first pattern of actinic radiation. The first pattern is a first component of a composite pattern. The first pattern of actinic radiation is aligned using the reference pattern. The wafer is exposed to a second pattern of actinic radiation. The second pattern is a second component of the composite pattern and exposed adjacent to the first pattern. The second pattern of actinic radiation is aligned with the first pattern of actinic radiation using the reference pattern.

An information processing apparatus includes an acquisition unit configured to acquire information containing first process data indicating a result of a substrate process in a first process condition and second process data indicating a result of a substrate process in a second process condition different from the first process condition, and a display control unit configured to control a display on a display apparatus based on the information acquired by the acquisition unit, wherein the display control unit is configured to display, on the display apparatus, a first screen displaying a first data group in which the first process data is arranged chronologically and a second data group in which the second process data is arranged chronologically, the first screen displaying the first data group in a region and the second data group in another region.