An alignment structure is provided. The alignment structure includes a substrate, an alignment portion, and an extension portion. The alignment portion is disposed on the substrate. The extension portion is disposed on the substrate. The extension portion at least partially surrounds the alignment portion and is spaced apart from the alignment portion by a void. A side of the extension portion adjacent to the alignment portion and a side of the alignment portion adjacent to the extension portion are conformal to each other.

A semiconductor device includes: a semiconductor substrate having a first surface; a device area that is formed on the semiconductor substrate and includes a semiconductor element; and a conductive member that surrounds the device area and extends in a first direction perpendicularly intersecting the first surface. The conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction. A pitch of the first pattern in a second direction intersecting the first direction is different from a pitch of the second pattern in the second direction.

The present invention provides a measurement apparatus for measuring a position of a first pattern and a position of a second pattern provided in a target object, the apparatus including an image capturing unit including a plurality of pixels which detect light from the first pattern and light from the second pattern, and configured to form an image capturing region used to capture the first pattern and the second pattern by the plurality of pixels, and a control unit configured to adjust the image capturing unit such that a relative ratio of an intensity of a detection signal of the first pattern generated based on an output from a first image capturing region and an intensity of a detection signal of the second pattern generated based on an output from a second image capturing region falls within an allowable range.

A method of disposing a substrate on a holding unit using a pattern forming apparatus which forms a pattern on the substrate, the pattern forming apparatus comprising: a stage, the holding unit removably attached to the stage and configured to suck and hold the substrate, an optical system, and configured to detect an alignment mark of the substrate from a suction surface side of the substrate, the optical system having plural optical elements, and a detection unit configured to detect a reference mark for measuring a position of a detection field of the optical system, the method comprising: detecting a position of the reference mark, and disposing the substrate on the holding unit using the detected position of the reference mark so that the alignment mark of the substrate detected from the suction surface side of the substrate by the optical system is disposed in the detection field.

Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark , each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.

The present invention provides a processing system that includes a first apparatus and a second apparatus, and processes a substrate, wherein the first apparatus includes a first measurement unit configured to detect a first structure and a second structure different from the first structure provided on the substrate, and measure a relative position between the first structure and the second structure, and the second apparatus includes an obtainment unit configured to obtain the relative position measured by the first measurement unit, a second measurement unit configured to detect the second structure and measure a position of the second structure, and a control unit configured to obtain a position of the first structure based on the relative position obtained by the obtainment unit and the position of the second structure measured by the second measurement unit.

One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

Described herein are methods of determining an alignment model associated with a mark layout. A method includes obtaining (a) first measurement data a relatively dense mark layout (e.g., more than 200 marks) in comparison with a relatively sparse mark layout (e.g., less than 65 marks) and a second measurement data associated with the relatively sparse mark layout, and (b) a first fitted model that describes object deformation for the relatively dense overlay mark layout; and determining the alignment model based on a second fitted model that describes object deformation for the relatively sparse mark layout, via an fitting technique, based on generalized squares fitting employing an oblique inner product matrix (e.g., W) or an oblique projection least squares fitting employing an oblique projection matrix (e.g., P).