A technique including: a plurality of substrate supports for supporting at least one substrate; a processing container in which the supports and the substrate are processed; a gas supplier for supplying a film forming gas for depositing a film and a cleaning gas removing the deposited film into the processing container; a memory that stores the thickness of the deposited film; and a controller for controlling the cleaning process of the processing container and the two or more of the plurality of substrate supports, wherein the cleaning process is performed where value of the processing container is greater than or equal to a threshold value and, wherein the cleaning process including: allocating a cleaning time for each of the plurality of substrate supports; taking the substrate supports into the processing container; supplying the cleaning gas to remove the deposited film; and, taking the substrate supports from the processing container.

There is provided a technique that includes: a process chamber configured to process a substrate; a memory configured to store sensor data obtained from at least two sensors, which have a master-slave relationship and are capable of obtaining a same type of data; a monitor configured to, if the sensor data satisfies a predetermined condition, determine that the sensor corresponding to the sensor data is abnormal; a switch configured to, if the sensor determined to be abnormal is a master sensor, switch a slave sensor which is a sensor other than the master sensor among the sensors to a new master sensor; a calculator configured to calculate a processing time for the substrate from the sensor data of the master sensor; and a controller configured to obtain the processing time calculated by the calculator before processing the substrate and control the processing of the substrate using the obtained processing time.